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Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2349-2353
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Enhancement of mask selectivity in SiO2 etching with a phase-controlled pulsed inductively coupled plasma
a a a a a a a |
Author keywords
C2 (516.5nm) line; Emission intensity; Mask selectivity; Plasma potential distribution; Polymerization; Pulse plasma; QMS; SiO2 etching; VDC
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Indexed keywords
MASKS;
MASS SPECTROMETERS;
PHASE MODULATION;
PHOTORESISTS;
PLASMA PROBES;
POLYMERIZATION;
SILICA;
ENERGY SPECTROSCOPIC QUADRUPOLE MASS SPECTROMETERS (QMS);
MASK SELECTIVITY;
PHASE CONTROLLED PULSED INDUCTIVELY COUPLED PLASMAS;
PLASMA POTENTIAL DISTRIBUTIONS;
PLASMA ETCHING;
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EID: 0032049152
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.37.2349 Document Type: Article |
Times cited : (13)
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References (15)
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