Effect of electron shading on gate oxide degradation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2321-2324

  Sakamori, Shigenori ^a   Maruyama, Takahiro ^a   Fujiwara, Nobuo ^a   Miyatake, Hiroshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

Charge build up; Electron cyclotron resonance; Microwave plasma; MNOS capacitor; MOS capacitor; Oxide degradation; Plasma etching; Pulse modulated

Indexed keywords

CAPACITORS; DEGRADATION; ELECTRIC CHARGE; ELECTRON CYCLOTRON RESONANCE; NITRIDES; OXIDES; PULSE MODULATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ELECTRON SHADING; METAL NITRIDE OXIDE SILICON (MNOS) CAPACITORS; METAL OXIDE SILICON (MOS) CAPACITORS;

PLASMA ETCHING;

EID: 0032048559     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2321     Document Type: Article

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