On the interest of carbon-coated plasma reactor for advanced gate stack etching processes

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 2, 2007, Pages 290-303

  Ramos, R ^a,b   Cunge, G ^b   Joubert, O ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; GATE DIELECTRICS; INTEGRATED CIRCUIT LAYOUT; MICROFABRICATION; PASSIVATION; PLASMA ETCHING; SILICON WAFERS;

CARBON-COATED PLASMA REACTORS; GATE STACK ETCHING PROCESS; NONVOLATILE FLUORIDE RESIDUES;

GATES (TRANSISTOR);

EID: 34248596339     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2464126     Document Type: Article

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