Reactive and anisotropic etching of magnetic tunnel junction films using pulse-time-modulated plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 3, 2007, Pages 432-436

  Mukai, Tomonori ^a,b   Ohshima, Norikazu ^b   Hada, Hiromitsu ^b   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC ETCHING; MAGNETORESISTANCE; RANDOM ACCESS STORAGE; REACTIVE ION ETCHING; TUNNEL JUNCTIONS;

CONTINUOUS WAVE DISCHARGE PLASMA; PULSE-TIME-MODULATED PLASMA; STACKED FILMS;

MAGNETIC FILMS;

EID: 34047169853     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2712192     Document Type: Article

References (11)

1. W. J. Yoo, J. H. Hahm, H. W. Kim, C. O. Jung, Y. B. Koh, and M. Y. Lee, Jpn. J. Appl. Phys., Part 1 35, 2501 (1996).
2. S. Samukawa, Appl. Phys. Lett. 64, 3398 (1994).
3. S. Samukawa, H. Ohtake, and T. Mieno, J. Vac. Sci. Technol. A 14, 3049 (1996).
4. H. Ohtake, S. Samukawa, H. Oikawa, and Y. Nashimoto, Jpn. J. Appl. Phys., Part 1 37, 2311 (1998).
5. S. Samukawa, S. Kumagai, and T. Shiraiwa, Jpn. J. Appl. Phys., Part 2 42. L1272 (2003).
6. T. Mukai, H. Hada, S. Tahara, H. Yoda, and S. Samukawa, Jpn. J. Appl. Phys., Part 1 45, 5542 (2006).
7. M. Okigawa, Y. Ishikawa, and S. Samukawa, Jpn. J. Appl. Phys., Part 1 42, 2444 (2003).
8. M. Okigawa, Y. Ishikawa, Y. Ichihashi, and S. Samukawa, J. Vac. Sci. Technol. B 22, 2818 (2004).
9. Y. Ishikawa, M. Okigawa, S. Samukawa, and S. Yamasaki, J. Vac. Sci. Technol. B 23, 389 (2005).
10. K. B. Jung, H. Cho, Y. B. Hahn, D. C. Hays, E. S. Umbers, Y. D. Park, T. Feng, J. R. Childress, and S. J. Pearton, J. Electrochem. Soc. 146, 1465 (1999).
11. K. B. Jung, H. Cho, Y. B. Hahn, D. C. Hays, E. S. Lambers, Y. D. Park, and T. Feng, J. Vac. Sci. Technol. A 17, 2223 (1999).