-
1
-
-
34249888719
-
Poly- SiTiNHf O2 gate stack etching in high-density plasmas
-
DOI 10.1116/1.2732736
-
A. Le Gouil, O. Joubert, G. Cunge, T. Chevolleau, L. Vallier, B. Chenevier, and I. Matko, J. Vac. Sci. Technol. B 25, 767 (2007). 10.1116/1.2732736 (Pubitemid 46872364)
-
(2007)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.25
, Issue.3
, pp. 767-778
-
-
Le Gouil, A.1
Joubert, O.2
Cunge, G.3
Chevolleau, T.4
Vallier, L.5
Chenevier, B.6
Matko, I.7
-
2
-
-
79551645536
-
-
10.1116/1.3533939
-
O. Luere, E. Pargon, L. Vallier, and O. Joubert, J. Vac. Sci. Technol. B 29 (1), 11024 (2011). 10.1116/1.3533939
-
(2011)
J. Vac. Sci. Technol. B
, vol.29
, Issue.1
, pp. 11024
-
-
Luere, O.1
Pargon, E.2
Vallier, L.3
Joubert, O.4
-
3
-
-
77957723719
-
-
10.1116/1.3483165
-
C. Petit-Etienne, M. Darnon, L. Vallier, E. Pargon, G. Cunge, F. Boulard, O. Joubert, S. Banna, and T. Lill, J. Vac. Sci. Technol. B 28 (5), 926 (2010). 10.1116/1.3483165
-
(2010)
J. Vac. Sci. Technol. B
, vol.28
, Issue.5
, pp. 926
-
-
Petit-Etienne, C.1
Darnon, M.2
Vallier, L.3
Pargon, E.4
Cunge, G.5
Boulard, F.6
Joubert, O.7
Banna, S.8
Lill, T.9
-
4
-
-
70349437193
-
-
10.1109/TPS.2009.2028071
-
S. Banna, A. Agarwal, K. Tokashiki, H. Cho, S. Rauf, V. Todorow, K. Ramaswamy, K. Collins, P. Stout, J. Y. Lee, J. Yoon, K. Shin, S. J. Choi, H. S. Cho, H. J. Kim, C. Lee, and D. Lymberopoulos, IEEE Trans. Plasma Sci. 37 (9), 1730 (2009). 10.1109/TPS.2009.2028071
-
(2009)
IEEE Trans. Plasma Sci.
, vol.37
, Issue.9
, pp. 1730
-
-
Banna, S.1
Agarwal, A.2
Tokashiki, K.3
Cho, H.4
Rauf, S.5
Todorow, V.6
Ramaswamy, K.7
Collins, K.8
Stout, P.9
Lee, J.Y.10
Yoon, J.11
Shin, K.12
Choi, S.J.13
Cho, H.S.14
Kim, H.J.15
Lee, C.16
Lymberopoulos, D.17
-
5
-
-
33745488410
-
Characteristics of large-diameter plasma using a radial-line slot antenna
-
DOI 10.1116/1.2167983, 018604JVA
-
C. Tian, T. Nozawa, K. Ishibasi, H. Kameyama, and T. Morimoto, J. Vac. Sci. Technol. A 24 (4), 1421 (2006). 10.1116/1.2167983 (Pubitemid 43959179)
-
(2006)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.24
, Issue.4
, pp. 1421-1424
-
-
Tian, C.1
Nozawa, T.2
Ishibasi, K.3
Kameyama, H.4
Morimoto, T.5
-
6
-
-
33745447675
-
Damage-free metal-oxide-semiconductor gate electrode patterning on thin HfSiON film using neutral beam etching
-
DOI 10.1116/1.2189264
-
S. Noda, T. Ozaki, and S. Samukawa, J. Vac. Sci. Technol. A 24 (4), 1414 (2006). 10.1116/1.2189264 (Pubitemid 43954863)
-
(2006)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.24
, Issue.4
, pp. 1414-1420
-
-
Noda, S.1
Ozaki, T.2
Samukawa, S.3
-
8
-
-
27944471055
-
Time-resolved measurements of the ion energy distribution function in a pulsed discharge using a double gating technique
-
DOI 10.1088/0957-0233/16/12/007, PII S0957023305003684
-
S. A. Voronin, M. R. Alexander, and J. W. Bradley, Meas. Sci. Technol. 16, 2446 (2005). 10.1088/0957-0233/16/12/007 (Pubitemid 41662329)
-
(2005)
Measurement Science and Technology
, vol.16
, Issue.12
, pp. 2446-2452
-
-
Voronin, S.A.1
Alexander, M.R.2
Bradley, J.W.3
-
10
-
-
0000626081
-
-
10.1063/1.373714
-
O. Zabeida, A. Hallil, M. R. Wertheimer, and L. Martinu, J. Appl. Phys. 88 (2), 635 (2000). 10.1063/1.373714
-
(2000)
J. Appl. Phys.
, vol.88
, Issue.2
, pp. 635
-
-
Zabeida, O.1
Hallil, A.2
Wertheimer, M.R.3
Martinu, L.4
-
16
-
-
0033410860
-
-
10.1116/1.581609
-
M. V. Malyshev, V. M. Donnelly, A. Kornblit, N. A. Ciampa, J. I. Colonell, and J. T. C. Lee, J. Vac. Sci. Technol. A 17 (2), 480 (1999). 10.1116/1.581609
-
(1999)
J. Vac. Sci. Technol. A
, vol.17
, Issue.2
, pp. 480
-
-
Malyshev, M.V.1
Donnelly, V.M.2
Kornblit, A.3
Ciampa, N.A.4
Colonell, J.I.5
Lee, J.T.C.6
-
17
-
-
0034225990
-
-
10.1116/1.582366
-
K. Noguchi, S. Samukawa, H. Ohtake, and T. Mukai, J. Vac. Sci. Technol. A 18 (4), 1431 (2000). 10.1116/1.582366
-
(2000)
J. Vac. Sci. Technol. A
, vol.18
, Issue.4
, pp. 1431
-
-
Noguchi, K.1
Samukawa, S.2
Ohtake, H.3
Mukai, T.4
-
22
-
-
0036296946
-
-
10.1351/pac200274030397
-
J. P. Booth, Pure Appl. Chem. 74 (3), 397 (2002). 10.1351/pac200274030397
-
(2002)
Pure Appl. Chem.
, vol.74
, Issue.3
, pp. 397
-
-
Booth, J.P.1
-
23
-
-
0032137652
-
-
10.1088/0963-0252/7/3/021
-
J. P. Booth, G. Cunge, F. Neuilly, and N. Sadeghi, Plasma Sources Sci. Technol. 7, 423 (1998). 10.1088/0963-0252/7/3/021
-
(1998)
Plasma Sources Sci. Technol.
, vol.7
, pp. 423
-
-
Booth, J.P.1
Cunge, G.2
Neuilly, F.3
Sadeghi, N.4
-
24
-
-
0036166062
-
Chlorine dissociation fraction in an inductively coupled plasma measured by ultraviolet absorption spectroscopy
-
DOI 10.1116/1.1430247
-
F. Neuilly, J. P. Booth, and L. Vallier, J. Vac. Sci. Technol. A 20 (1), 225 (2002). 10.1116/1.1430247 (Pubitemid 34138349)
-
(2002)
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
, vol.20
, Issue.1
, pp. 225-229
-
-
Neuilly, F.1
Booth, J.-P.2
Vallier, L.3
-
25
-
-
3242715220
-
-
10.1088/0022-3727/37/14/010
-
M. Kogelschatz, G. Cunge, and N. Sadeghi, J. Phys. D: Appl. Phys. 37 (14), 1954 (2004). 10.1088/0022-3727/37/14/010
-
(2004)
J. Phys. D: Appl. Phys.
, vol.37
, Issue.14
, pp. 1954
-
-
Kogelschatz, M.1
Cunge, G.2
Sadeghi, N.3
-
26
-
-
36849034839
-
Broadband and time-resolved absorption spectroscopy with light emitting diodes: Application to etching plasma monitoring
-
DOI 10.1063/1.2822448
-
G. Cunge, D. Vempaire, M. Touzeau, and N. Sadeghi, Appl. Phys. Lett. 91, 231503 (2007). 10.1063/1.2822448 (Pubitemid 350234423)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.23
, pp. 231503
-
-
Cunge, G.1
Vempaire, D.2
Touzeau, M.3
Sadeghi, N.4
-
28
-
-
77953017591
-
-
10.1088/0963-0252/19/3/034017
-
G. Cunge, D. Vempaire, R. Ramos, M. Touzeau, O. Joubert, P. Bodart, and N. Sadeghi, Plasma Sources Sci. Technol. 19, 34017 (2010). 10.1088/0963-0252/19/ 3/034017
-
(2010)
Plasma Sources Sci. Technol.
, vol.19
, pp. 34017
-
-
Cunge, G.1
Vempaire, D.2
Ramos, R.3
Touzeau, M.4
Joubert, O.5
Bodart, P.6
Sadeghi, N.7
-
29
-
-
79952949677
-
-
10.1088/0022-3727/44/12/122001
-
G. Cunge, M. Fouchier, M. Brihoum, P. Bodart, M. Touzeau, and N. Sadeghi, J. Phys D: Appl. Phys. 44 (12), 122001 (2010). 10.1088/0022-3727/44/12/122001
-
(2010)
J. Phys D: Appl. Phys.
, vol.44
, Issue.12
, pp. 122001
-
-
Cunge, G.1
Fouchier, M.2
Brihoum, M.3
Bodart, P.4
Touzeau, M.5
Sadeghi, N.6
-
30
-
-
0033469422
-
-
10.1116/1.581981
-
H. Singh, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 17 (5), 2447 (2000). 10.1116/1.581981
-
(2000)
J. Vac. Sci. Technol. A
, vol.17
, Issue.5
, pp. 2447
-
-
Singh, H.1
Coburn, J.W.2
Graves, D.B.3
-
31
-
-
0034155705
-
-
10.1116/1.582183
-
H. Singh, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 18 (2), 299 (2000). 10.1116/1.582183
-
(2000)
J. Vac. Sci. Technol. A
, vol.18
, Issue.2
, pp. 299
-
-
Singh, H.1
Coburn, J.W.2
Graves, D.B.3
-
32
-
-
1242352014
-
-
10.1116/1.1627767
-
A. Agarwal, G. W. W. Quax, M. C. M. Van de Sanden, D. Maroudas, and E. S. Aydil, J. Vac. Sci. Technol. A 22 (1), 71 (2003). 10.1116/1.1627767
-
(2003)
J. Vac. Sci. Technol. A
, vol.22
, Issue.1
, pp. 71
-
-
Agarwal, A.1
Quax, G.W.W.2
Van De Sanden, M.C.M.3
Maroudas, D.4
Aydil, E.S.5
-
34
-
-
36549100100
-
-
10.1063/1.343712
-
J. P. Booth, G. Hancock, N. D. Perry, and M. J. Toogood, J. Appl. Phys. 66 (11), 5251 (1989). 10.1063/1.343712
-
(1989)
J. Appl. Phys.
, vol.66
, Issue.11
, pp. 5251
-
-
Booth, J.P.1
Hancock, G.2
Perry, N.D.3
Toogood, M.J.4
-
35
-
-
0000347228
-
-
10.1063/1.369649
-
J. P. Booth, G. Cunge, P. Chabert, and N. Sadeghi, J. Appl. Phys. 85 (6), 3097 (1999). 10.1063/1.369649
-
(1999)
J. Appl. Phys.
, vol.85
, Issue.6
, pp. 3097
-
-
Booth, J.P.1
Cunge, G.2
Chabert, P.3
Sadeghi, N.4
-
36
-
-
0001620883
-
-
10.1063/1.370296
-
G. Cunge and J. P. Booth, J. Appl. Phys. 85 (8), 3952 (1999). 10.1063/1.370296
-
(1999)
J. Appl. Phys.
, vol.85
, Issue.8
, pp. 3952
-
-
Cunge, G.1
Booth, J.P.2
-
37
-
-
0035875448
-
-
10.1063/1.1371940
-
G. Cunge, P. Chabert, and J. P. Booth, J. Appl. Phys. 89 (12), 7750 (2001). 10.1063/1.1371940
-
(2001)
J. Appl. Phys.
, vol.89
, Issue.12
, pp. 7750
-
-
Cunge, G.1
Chabert, P.2
Booth, J.P.3
-
39
-
-
0000892949
-
-
10.1063/1.371447
-
M. V. Malyshev, V. M. Donnelly, J. I. Colonell, and S. Samukawa, J. Appl. Phys. 86 (9), 4813 (1999). 10.1063/1.371447
-
(1999)
J. Appl. Phys.
, vol.86
, Issue.9
, pp. 4813
-
-
Malyshev, M.V.1
Donnelly, V.M.2
Colonell, J.I.3
Samukawa, S.4
-
44
-
-
79952034604
-
-
10.1116/1.3517478
-
V. M. Donnelly, J. Guha, and L. Stafford, J. Vac. Sci. Technol. A 29 (1), 10801 (2011). 10.1116/1.3517478
-
(2011)
J. Vac. Sci. Technol. A
, vol.29
, Issue.1
, pp. 10801
-
-
Donnelly, V.M.1
Guha, J.2
Stafford, L.3
-
46
-
-
0032331388
-
The recombination of chlorine atoms at surfaces
-
DOI 10.1116/1.580982
-
G. P. Kota, J. W. Coburn, and D. B. Graves, J. Vac. Sci. Technol. A 16 (1), 270 (1998). 10.1116/1.580982 (Pubitemid 128020234)
-
(1998)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.16
, Issue.1
, pp. 270-277
-
-
Kota, G.P.1
Coburn, J.W.2
Graves, D.B.3
-
47
-
-
0001837089
-
-
10.1063/1.369423
-
G. P. Kota, J. W. Coburn, and D. B. Graves, J. Appl. Phys. 85 (1), 74 (1998). 10.1063/1.369423
-
(1998)
J. Appl. Phys.
, vol.85
, Issue.1
, pp. 74
-
-
Kota, G.P.1
Coburn, J.W.2
Graves, D.B.3
-
48
-
-
36249004278
-
Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: I. Without silicon etching
-
DOI 10.1063/1.2803880
-
G. Cunge, N. Sadeghi, and R. Ramos, J. Appl. Phys. 102, 093304 (2007). 10.1063/1.2803880 (Pubitemid 350128990)
-
(2007)
Journal of Applied Physics
, vol.102
, Issue.9
, pp. 093304
-
-
Cunge, G.1
Sadeghi, N.2
Ramos, R.3
-
49
-
-
18744400282
-
2 plasmas
-
DOI 10.1088/0963-0252/14/2/S06, PII S0963025205952997
-
G. Cunge, M. Kogelschatz, O. Joubert, and N. Sadeghi, Plasma Sources Sci. Technol. 14, S42 (2005). 10.1088/0963-0252/14/2/S06 (Pubitemid 40665904)
-
(2005)
Plasma Sources Science and Technology
, vol.14
, Issue.2
-
-
Cunge, G.1
Kogelschatz, M.2
Joubert, O.3
Sadeghi, N.4
-
50
-
-
0036162520
-
2 concentrations in an inductively coupled plasma reactor
-
DOI 10.1116/1.1421602
-
S. J. Ullal, A. R. Godfrey, E. A. Edelberg, L. B. Braly, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20 (1), 43 (2002). 10.1116/1.1421602 (Pubitemid 34138326)
-
(2002)
Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
, vol.20
, Issue.1
, pp. 43-52
-
-
Ullal, S.J.1
Godfrey, A.R.2
Edelberg, E.3
Braly, L.4
Vahedi, V.5
Aydil, E.S.6
-
51
-
-
0036649080
-
2 plasma etching of Si
-
DOI 10.1116/1.1479733
-
S. J. Ullal, H. Singh, J. Daugherty, V. Vahedi, and E. S. Aydil, J. Vac. Sci. Technol. A 20 (4), 1195 (2002). 10.1116/1.1479733 (Pubitemid 34882431)
-
(2002)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.20
, Issue.4
, pp. 1195-1201
-
-
Ullal, S.J.1
Singh, H.2
Daugherty, J.3
Vahedi, V.4
Aydil, E.S.5
-
52
-
-
0344946327
-
-
10.1063/1.1619575
-
G. Cunge, O. Joubert, and N. Sadeghi, J. Appl. Phys. 94 (10), 6285 (2003). 10.1063/1.1619575
-
(2003)
J. Appl. Phys.
, vol.94
, Issue.10
, pp. 6285
-
-
Cunge, G.1
Joubert, O.2
Sadeghi, N.3
-
54
-
-
85026341102
-
Influence of the reactor wall composition on radicals' densities and total pressure in Cl2 inductively coupled plasmas: II. during silicon etching
-
DOI 10.1063/1.2803881
-
G. Cunge, N. Sadeghi, and R. Ramos, J. Appl. Phys. 102, 093305 (2007). 10.1063/1.2803881 (Pubitemid 350128991)
-
(2007)
Journal of Applied Physics
, vol.102
, Issue.9
, pp. 093305
-
-
Cunge, G.1
Sadeghi, N.2
Ramos, R.3
-
55
-
-
34248596339
-
On the interest of carbon-coated plasma reactor for advanced gate stack etching processes
-
DOI 10.1116/1.2464126
-
R. Ramos, G. Cunge, and O. Joubert, J. Vac. Sci. Technol. A 25, 290 (2007). 10.1116/1.2464126 (Pubitemid 46747674)
-
(2007)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.25
, Issue.2
, pp. 290-303
-
-
Ramos, R.1
Cunge, G.2
Joubert, O.3
-
56
-
-
33947170936
-
-
10.1016/j.tsf.2006.10.025
-
R. Ramos, G. Cunge, O. Joubert, N. Sadeghi, M. Mori, and L. Vallier, Thin Solid Films 512 (12), 4846 (2006). 10.1016/j.tsf.2006.10.025
-
(2006)
Thin Solid Films
, vol.512
, Issue.12
, pp. 4846
-
-
Ramos, R.1
Cunge, G.2
Joubert, O.3
Sadeghi, N.4
Mori, M.5
Vallier, L.6
-
57
-
-
84859295140
-
-
Synchronous plasma pulsing for etch applications, Paris, (unpublished).
-
M. Haass, M. Darnon, E. Pargon, C. Petit-Etienne, L. Vallier, P. Bodart, G. Cunge, S. Banna, T. Lill, and O. Joubert, Synchronous plasma pulsing for etch applications presented at the GEC-ICRP2010, Paris, 2010 (unpublished).
-
(2010)
Presented at the GEC-ICRP2010
-
-
Haass, M.1
Darnon, M.2
Pargon, E.3
Petit-Etienne, C.4
Vallier, L.5
Bodart, P.6
Cunge, G.7
Banna, S.8
Lill, T.9
Joubert, O.10
-
58
-
-
0036026375
-
Design of notched gate processes in high density plasmas
-
DOI 10.1116/1.1505959
-
J. Foucher, G. Cunge, L. Vallier, and O. Joubert, J. Vac. Sci. Technol. B 20 (5), 2024 (2002). 10.1116/1.1505959 (Pubitemid 35354110)
-
(2002)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.20
, Issue.5
, pp. 2024-2031
-
-
Foucher, J.1
Cunge, G.2
Vallier, L.3
Joubert, O.4
-
59
-
-
0037274174
-
-
10.1116/1.1563255
-
L. Vallier, J. Foucher, X. Detter, E. Pargon, O. Joubert, and G. Cunge, J. Vac. Sci. Technol. B 21 (2), 904 (2003). 10.1116/1.1563255
-
(2003)
J. Vac. Sci. Technol. B
, vol.21
, Issue.2
, pp. 904
-
-
Vallier, L.1
Foucher, J.2
Detter, X.3
Pargon, E.4
Joubert, O.5
Cunge, G.6
-
60
-
-
34648818191
-
3 plasmas
-
DOI 10.1116/1.2781550
-
E. Sungauer, E. Pargon, X. Melhaoui, R. Ramos, G. Cunge, L. Vallier, and O. Joubert, J. Vac. Sci. Technol. B 25, 1640 (2007). 10.1116/1.2781550 (Pubitemid 47463655)
-
(2007)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.25
, Issue.5
, pp. 1640-1646
-
-
Sungauer, E.1
Pargon, E.2
Mellhaoui, X.3
Ramos, R.4
Cunge, G.5
Vallier, L.6
Joubert, O.7
Lill, T.8
-
61
-
-
21844496315
-
2-to-Si etching in an inductively coupled high-density plasma using fluorocarbon gases
-
DOI 10.1116/1.578942
-
F. H. Bell, O. Joubert, G. S. Oehrlein, Y. Zhang, and D. Vender, J. Vac. Sci. Technol. A 12 (6), 3095 (1994). 10.1116/1.578942 (Pubitemid 24836847)
-
(1994)
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
, vol.12
, Issue.6
, pp. 3095
-
-
Bell, F.H.1
Joubert, O.2
Oehrlein, G.S.3
Zhang, Y.4
|