Influence of electron shading on highly selective SiO2 to Si etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 1, 2000, Pages 176-180

  Miyatake, Hiroshi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DEPOSITION; ELECTRONS; PLASMAS; SILICA;

ELECTRON SHADING EFFECTS; FLUOROCARBON GAS PLASMA; POSITIVE CHARGE;

ETCHING;

EID: 0033707505     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582134     Document Type: Article

References (2)

1. N. Fujiwara, T. Maruyama, and M. Yoneda, Jpn. J. Appl. Phys., Part 1 34, 2095 (1995).
2. S. Ogino, N. Fujiwara, H. Miyatake, and M. Yoneda, Jpn. J. Appl. Phys., Part 1 35, 2445 (1996).