Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge coupled 44 device image sensor processes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 6, 2003, Pages 2448-2454

  Okigawa, Mitsuru ^a,b   Ishikawa, Yasushi ^a   Samukawa, Seiji ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE COUPLED DEVICES; ELECTRIC CURRENTS; HEAT TREATMENT; HELIUM; IMAGE SENSORS; INDUCTIVELY COUPLED PLASMA; INTERFEROMETERS; MOS DEVICES; PHOTONS; RADIATION DAMAGE; THRESHOLD VOLTAGE; ULTRAVIOLET RADIATION;

DARK CURRENTS; PHOTOINDUCED CURRENTS;

SILICA;

EID: 0942267562     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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