Decreasing high ion energy during transition in pulsed inductively coupled plasmas

Applied Physics Letters

Volumn 100, Issue 4, 2012, Pages

  Agarwal, Ankur ^a   Stout, Phillip J ^a   Banna, Samer ^a   Rauf, Shahid ^a   Collins, Ken ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS POWER; ELECTRONEGATIVE GAS; ETCH DEPTH; ETCHING PROCESS; HIGH VOLTAGE; HIGH-ENERGY IONS; ION ENERGIES; PLASMA MODEL; PLASMA TRANSITION; RF PLASMA;

ELECTROMAGNETIC INDUCTION; GAS MIXTURES; GASES; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING; SILICON WAFERS;

ION BOMBARDMENT;

EID: 84856487122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3679075     Document Type: Article

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