Radical surface interactions in industrial silicon plasma etch reactors

Plasma Sources Science and Technology

Volumn 19, Issue 3, 2010, Pages

  Cunge, G ^a   Vempaire, D ^a   Ramos, R ^a   Touzeau, M ^a   Joubert, O ^a   Bodard, P ^a   Sadeghi, N ^a  

^a Laboratoire Interdisciplinaire de Physique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BEST STRATEGY; BROAD BAND ABSORPTION SPECTROSCOPY; CHAMBER WALLS; CHEMICAL NATURE; CL ATOMS; COLD REGIONS; CONVECTION PHENOMENA; DENSITY RATIO; DOPPLER SPECTROSCOPY; EXCHANGE REACTION; FAST ELECTRONS; GAS MOVEMENT; GAS TEMPERATURE; INTERACTIONS WITH SURFACES; LAYER DEPOSITION; OXIDIZATION; PLASMA ETCH; PLASMA VOLUME; PLASMA-SURFACE INTERACTIONS; PULSED DISCHARGE; RADICAL DENSITIES; REACTOR WALLS; RECENT PROGRESS; RECOMBINATION COEFFICIENT; SILICON ETCHING; STEADY-STATE PLASMAS; STICKING COEFFICIENTS; SURFACE INTERACTIONS; TIME RESOLVED MEASUREMENT; TIME-RESOLVED ABSORPTION MEASUREMENTS; TRANSPORT OF PARTICLES; UV LIGHT EMITTING DIODE;

BOUNDARY LAYERS; COATED MATERIALS; ETCHING; GAS ABSORPTION; LIGHT EMITTING DIODES; PLASMA INTERACTIONS; PROCESS CONTROL; PULSED LASER APPLICATIONS; PULSED LASERS; SILICON WAFERS; SURFACE DISCHARGES; SURFACES; X RAY PHOTOELECTRON SPECTROSCOPY;

ABSORPTION SPECTROSCOPY;

EID: 77953017591     PISSN: 09630252     EISSN: 13616595     Source Type: Journal    
DOI: 10.1088/0963-0252/19/3/034017     Document Type: Article

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