Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 5, 2003, Pages 2205-2211

  Vitale, S A ^a   Smith, B A ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; MATHEMATICAL MODELS; MOSFET DEVICES; OXIDATION; PLASMA ETCHING; PLASMA SHEATHS; POLYSILICON; TRANSMISSION ELECTRON MICROSCOPY;

COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TRANSISTOR; PLASMA OXIDATION; PLASMA POLYSILICON GATE ETCHING; SILICON RECESS; THERMAL OXIDATION;

SEMICONDUCTING SILICON;

EID: 0242593743     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1609474     Document Type: Article

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