Synchronous pulse plasma operation upon source and bias radio frequencys for inductively coupled plasma for highly reliable gate etching technology

Japanese Journal of Applied Physics

Volumn 48, Issue 8 Part 2, 2009, Pages

  Tokashiki, Ken ^a   Cho, Hong ^a   Banna, Samer ^b   Lee, Jeong Yun ^a   Shin, Kyoungsub ^a   Todorow, Valentin ^b   Kim, Woo Seok ^a   Bai, KeunHee ^a   Joo, Sukho ^a   Choe, Jeong Dong ^a   Ramaswamy, Kartik ^b   Agarwal, Ankur ^b   Rauf, Shahid ^b   Collins, Ken ^b   Choi, SangJun ^b   Cho, Han ^b   Kim, Hyun Joong ^b   Lee, Changhun ^b   Lymberopoulos, Dimitris ^b   Yoon, Junho ^a   Han, Woosung ^a   Moon, Joo Tae ^a   more..

^a SAMSUNG Electronics   (South Korea)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVES; CRITICAL DIMENSION UNIFORMITIES; DEVICE PERFORMANCE; DYNAMIC MATCHING; DYNAMIC RANDOM ACCESS MEMORY; GATE ETCHING; HYBRID PLASMA EQUIPMENT MODEL; PLASMA INDUCED DAMAGE; PULSE OPERATION; PULSE PLASMAS; REFLECTED POWER; RF FREQUENCIES; RF-POWER; SUB-50 NM;

COMPUTER SIMULATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTROMAGNETIC INDUCTION; PLASMA DIAGNOSTICS; PLASMA ETCHING;

INDUCTIVELY COUPLED PLASMA;

EID: 71749086979     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.08HD01     Document Type: Article

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