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Volumn 48, Issue 8 Part 2, 2009, Pages
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Synchronous pulse plasma operation upon source and bias radio frequencys for inductively coupled plasma for highly reliable gate etching technology
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Author keywords
[No Author keywords available]
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Indexed keywords
CONTINUOUS WAVES;
CRITICAL DIMENSION UNIFORMITIES;
DEVICE PERFORMANCE;
DYNAMIC MATCHING;
DYNAMIC RANDOM ACCESS MEMORY;
GATE ETCHING;
HYBRID PLASMA EQUIPMENT MODEL;
PLASMA INDUCED DAMAGE;
PULSE OPERATION;
PULSE PLASMAS;
REFLECTED POWER;
RF FREQUENCIES;
RF-POWER;
SUB-50 NM;
COMPUTER SIMULATION;
DYNAMIC RANDOM ACCESS STORAGE;
ELECTROMAGNETIC INDUCTION;
PLASMA DIAGNOSTICS;
PLASMA ETCHING;
INDUCTIVELY COUPLED PLASMA;
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EID: 71749086979
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.48.08HD01 Document Type: Article |
Times cited : (29)
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References (47)
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