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Volumn 48, Issue 8 Part 2, 2009, Pages

Synchronous pulse plasma operation upon source and bias radio frequencys for inductively coupled plasma for highly reliable gate etching technology

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVES; CRITICAL DIMENSION UNIFORMITIES; DEVICE PERFORMANCE; DYNAMIC MATCHING; DYNAMIC RANDOM ACCESS MEMORY; GATE ETCHING; HYBRID PLASMA EQUIPMENT MODEL; PLASMA INDUCED DAMAGE; PULSE OPERATION; PULSE PLASMAS; REFLECTED POWER; RF FREQUENCIES; RF-POWER; SUB-50 NM;

EID: 71749086979     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.08HD01     Document Type: Article
Times cited : (29)

References (47)
  • 14
    • 77952727010 scopus 로고    scopus 로고
    • US Patent 6,372,654
    • K. Tokashiki: US Patent 6,372,654 (2002).
    • (2002)
    • Tokashiki, K.1
  • 43
    • 77952697793 scopus 로고    scopus 로고
    • US Patent 5,688,357
    • H. Hanawa: US Patent 5,688,357 (1997).
    • (1997)
    • Hanawa, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.