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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 1, 2011, Pages

Recouping etch rates in pulsed inductively coupled plasmas

(5) Agarwal, Ankur a Stout, Phillip J a Banna, Samer a Rauf, Shahid a Collins, Ken a

a APPLIED MATERIALS INC (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISCHARGE CHARACTERISTICS; ETCH DEPTH; ETCH RATES; FINE TUNING; ION ENERGIES; ION ENERGY DISTRIBUTIONS; MONTE CARLO; PLASMA CHARACTERISTICS; PLASMA MODEL; PLASMA UNIFORMITY; POLY-SI; POWER COMPENSATION; PROFILE EVOLUTION; PULSED PLASMA; RF PLASMA; TIME-AVERAGED;

ELECTROMAGNETIC INDUCTION; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; IONS; PLASMA ETCHING; SILICON WAFERS;

ELECTRIC DISCHARGES;

EID: 79952014920 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3521315 Document Type: Article

Times cited : (26)

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