Pulse-time modulated plasma discharge for highly selective, highly anisotropic and charge-free etching

Plasma Sources Science and Technology

Volumn 5, Issue 2, 1996, Pages 132-138

  Samukawa, Seiji ^a   Mieno, Tetsu ^b  

^a NEC CORPORATION   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; GATES (TRANSISTOR); IONIZATION OF GASES; PLASMA DENSITY; PLASMA SHEATHS; PLASMA SOURCES; POLYCRYSTALLINE MATERIALS; PULSE TIME MODULATION; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR PLASMAS; SILICON WAFERS;

ELECTRON CYCLOTRON RESONANCE PLASMA ETCHING; PLASMA DISCHARGES; SELECTIVE ETCHING;

PLASMA ETCHING;

EID: 0030133965     PISSN: 09630252     EISSN: None     Source Type: Journal    
DOI: 10.1088/0963-0252/5/2/004     Document Type: Article

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