Mechanism of charging reduction in pulsed plasma etching

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2291-2301

  Hwang, Gyeong S ^a   Giapis, Konstantions P ^a  

^a California Institute of Technology   (United States)

Author keywords

Charging; Charging damage; Etching; Gate oxide degradation; Global models; Monte Carlo simulation; Notching; Pulsed plasma; Sheath dynamics

Indexed keywords

GATE OXIDE DEGRADATION; PULSED PLASMA ETCHING;

COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; MONTE CARLO METHODS; PLASMA SHEATHS;

PLASMA ETCHING;

EID: 0032047890     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.2291     Document Type: Article

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