-
1
-
-
84867304039
-
A roadmap for graphene
-
Novoselov, K. S. et al. A roadmap for graphene. Nature 490, 192-200 (2012).
-
(2012)
Nature
, vol.490
, pp. 192-200
-
-
Novoselov, K.S.1
-
2
-
-
77955231284
-
Graphene transistors
-
Schwierz, F. Graphene transistors. Nat. Nanotechnol. 5, 487-496 (2010).
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 487-496
-
-
Schwierz, F.1
-
3
-
-
84868699299
-
Graphene: An emerging electronic material
-
Weiss, N. O. et al. Graphene: An emerging electronic material. Adv. Mater. 24, 5782-5825 (2012).
-
(2012)
Adv. Mater.
, vol.24
, pp. 5782-5825
-
-
Weiss, N.O.1
-
4
-
-
84869074729
-
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
-
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712 (2012).
-
(2012)
Nat. Nanotechnol.
, vol.7
, pp. 699-712
-
-
Wang, Q.H.1
Kalantar-Zadeh, K.2
Kis, A.3
Coleman, J.N.4
Strano, M.S.5
-
5
-
-
84881167566
-
Van der Waals heterostructures
-
Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419-425 (2013).
-
(2013)
Nature
, vol.499
, pp. 419-425
-
-
Geim, A.K.1
Grigorieva, I.V.2
-
6
-
-
84875413255
-
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
-
Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263-275 (2013).
-
(2013)
Nat. Chem.
, vol.5
, pp. 263-275
-
-
Chhowalla, M.1
-
7
-
-
84920846601
-
Electronics based on two-dimensional materials
-
Fiori, G. et al. Electronics based on two-dimensional materials. Nat. Nanotechnol. 9, 768-779 (2013).
-
(2013)
Nat. Nanotechnol.
, vol.9
, pp. 768-779
-
-
Fiori, G.1
-
8
-
-
84894635747
-
Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides
-
Jariwala, D., Sangwan, V. K., Lauhon, L. J., Marks, T. J. & Hersam, M. C. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 8, 1102-1120 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 1102-1120
-
-
Jariwala, D.1
Sangwan, V.K.2
Lauhon, L.J.3
Marks, T.J.4
Hersam, M.C.5
-
9
-
-
84945895437
-
Ultrathin two-dimensional nanomaterials
-
Zhang, H. Ultrathin two-dimensional nanomaterials. ACS Nano 9, 9451-9469 (2015).
-
(2015)
ACS Nano
, vol.9
, pp. 9451-9469
-
-
Zhang, H.1
-
10
-
-
84455171658
-
Plasmon resonance enhanced multicolour photodetection by graphene
-
Liu, Y. et al. Plasmon resonance enhanced multicolour photodetection by graphene. Nat. Commun. 2, 579 (2011).
-
(2011)
Nat. Commun.
, vol.2
, pp. 579
-
-
Liu, Y.1
-
11
-
-
84863713445
-
Hybrid graphene-quantum dot phototransistors with ultrahigh gain
-
Konstantatos, G. et al. Hybrid graphene-quantum dot phototransistors with ultrahigh gain. Nat. Nanotechnol. 7, 363-368 (2012).
-
(2012)
Nat. Nanotechnol.
, vol.7
, pp. 363-368
-
-
Konstantatos, G.1
-
12
-
-
77951044011
-
Highk oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors
-
Liao, L. et al. Highk oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors. Proc. Natl Acad. Sci. USA 107, 6711-6715 (2010).
-
(2010)
Proc. Natl Acad. Sci. USA
, vol.107
, pp. 6711-6715
-
-
Liao, L.1
-
13
-
-
77956939304
-
High-speed graphene transistors with a self-aligned nanowire gate
-
Liao, L. et al. High-speed graphene transistors with a self-aligned nanowire gate. Nature 467, 305-308 (2010).
-
(2010)
Nature
, vol.467
, pp. 305-308
-
-
Liao, L.1
-
14
-
-
77957908617
-
Boron nitride substrates for high-quality graphene electronics
-
Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722-726 (2010).
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 722-726
-
-
Dean, C.R.1
-
15
-
-
84858164712
-
Electron tunneling through ultrathin boron nitride crystalline barriers
-
Britnell, L. et al. Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Lett. 12, 1707-1710 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 1707-1710
-
-
Britnell, L.1
-
16
-
-
84925484117
-
Light-emitting diodes by band-structure engineering in van der Waals heterostructures
-
Withers, F. et al. Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat. Mater. 14, 301-306 (2015).
-
(2015)
Nat. Mater.
, vol.14
, pp. 301-306
-
-
Withers, F.1
-
18
-
-
47749150628
-
Measurement of the elastic properties and intrinsic strength of monolayer graphene
-
Lee, C. et al. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 321, 385-388 (2008).
-
(2008)
Science
, vol.321
, pp. 385-388
-
-
Lee, C.1
-
19
-
-
59949098337
-
The electronic properties of graphene
-
Neto, A. C. et al. The electronic properties of graphene. Rev. Mod. Phys. 81, 109 (2009).
-
(2009)
Rev. Mod. Phys.
, vol.81
, pp. 109
-
-
Neto, A.C.1
-
20
-
-
33645752733
-
Unconventional quantum Hall effect and Berry's phase of 2 in bilayer graphene
-
Novoselov, K. S. et al. Unconventional quantum Hall effect and Berry's phase of 2 in bilayer graphene. Nat. Phys. 2, 177-180 (2006).
-
(2006)
Nat. Phys.
, vol.2
, pp. 177-180
-
-
Novoselov, K.S.1
-
21
-
-
67149121054
-
Direct observation of a widely tunable bandgap in bilayer graphene
-
Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature. 459, 820-823 (2009).
-
(2009)
Nature.
, vol.459
, pp. 820-823
-
-
Zhang, Y.1
-
22
-
-
79952903526
-
Single layer behavior and its breakdown in twisted graphene layers
-
Luican, A. et al. Single layer behavior and its breakdown in twisted graphene layers. Phys. Rev. Lett. 106, 126802 (2011).
-
(2011)
Phys. Rev. Lett.
, vol.106
, pp. 126802
-
-
Luican, A.1
-
23
-
-
79958830526
-
Micrometer-scale ballistic transport in encapsulated graphene at room temperature
-
Mayorov, A. S. et al. Micrometer-scale ballistic transport in encapsulated graphene at room temperature. Nano Lett. 11, 2396-2399 (2011).
-
(2011)
Nano Lett.
, vol.11
, pp. 2396-2399
-
-
Mayorov, A.S.1
-
25
-
-
77951593366
-
Atomic layers of hybridized boron nitride and graphene domains
-
Ci, L. et al. Atomic layers of hybridized boron nitride and graphene domains. Nat. Mater. 9, 430-43 5 (2010).
-
(2010)
Nat. Mater.
, vol.9
, pp. 430-435
-
-
Ci, L.1
-
26
-
-
84948776296
-
Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: Opportunities and challenges
-
Duan, X., Wang, C., Pan, A., Yu, R. & Duan, X. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges. Chem. Soc. Rev. 44, 8859-8876 (2015).
-
(2015)
Chem. Soc. Rev.
, vol.44
, pp. 8859-8876
-
-
Duan, X.1
Wang, C.2
Pan, A.3
Yu, R.4
Duan, X.5
-
27
-
-
77957204738
-
Atomically thin MoS2: A new direct-gap semiconductor
-
Mak, K. F., Lee, C., Hone, J., Shan, J. & Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 136805
-
-
Mak, K.F.1
Lee, C.2
Hone, J.3
Shan, J.4
Heinz, T.F.5
-
28
-
-
79952406873
-
Single-layer MoS2 transistors
-
Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147-150 (2011).
-
(2011)
Nat. Nanotechnol.
, vol.6
, pp. 147-150
-
-
Radisavljevic, B.1
Radenovic, A.2
Brivio, J.3
Giacometti, V.4
Kis, A.5
-
29
-
-
84964325351
-
From bulk crystals to atomically thin layers of group VI transition metal dichalcogenides vapour phase synthesis
-
Reale, F. Sharda, K. & Mattevi, C. et al. From bulk crystals to atomically thin layers of group VI transition metal dichalcogenides vapour phase synthesis. Appl. Mater. Today 3, 11-22 (2016).
-
(2016)
Appl. Mater. Today
, vol.3
, pp. 11-22
-
-
Reale, F.1
Sharda, K.2
Mattevi, C.3
-
30
-
-
84860329324
-
Synthesis of large area MoS2 atomic layers with chemical vapor deposition
-
Lee, Y. H. et al. Synthesis of large area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325 (2012).
-
(2012)
Adv. Mater.
, vol.24
, pp. 2320-2325
-
-
Lee, Y.H.1
-
31
-
-
84893662429
-
Chemical vapor deposition growth of monolayer MoSe2 nanosheets
-
Shaw, J. C. et al. Chemical vapor deposition growth of monolayer MoSe2 nanosheets. Nano. Res. 7, 511-517 (2014).
-
(2014)
Nano. Res.
, vol.7
, pp. 511-517
-
-
Shaw, J.C.1
-
32
-
-
84920986820
-
Large area growth and electrical properties of ptype WSe2 atomic layers
-
Zhou, H. et al. Large area growth and electrical properties of ptype WSe2 atomic layers. Nano. Lett. 15, 709-713 (2014).
-
(2014)
Nano. Lett.
, vol.15
, pp. 709-713
-
-
Zhou, H.1
-
33
-
-
84928789264
-
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
-
Kang, K. et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 520, 656-660 (2015).
-
(2015)
Nature
, vol.520
, pp. 656-660
-
-
Kang, K.1
-
34
-
-
84903281184
-
The valley Hall effect in MoS2 transistors
-
Mak, K. F., McGill, K. L., Park, J. & McEuen, P. L. The valley Hall effect in MoS2 transistors. Science 344, 1489-1492 (2014).
-
(2014)
Science
, vol.344
, pp. 1489-1492
-
-
Mak, K.F.1
McGill, K.L.2
Park, J.3
McEuen, P.L.4
-
35
-
-
84864881664
-
Valley polarization in MoS2 monolayers by optical pumping
-
Zeng, H., Dai, J., Yao, W., Xiao, D. & Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 7, 490-493 (2012).
-
(2012)
Nat. Nanotechnol.
, vol.7
, pp. 490-493
-
-
Zeng, H.1
Dai, J.2
Yao, W.3
Xiao, D.4
Cui, X.5
-
36
-
-
84870172199
-
Superconducting dome in a gate-tuned band insulator
-
Ye, J. et al. Superconducting dome in a gate-tuned band insulator. Science 338, 1193-1196 (2012).
-
(2012)
Science
, vol.338
, pp. 1193-1196
-
-
Ye, J.1
-
37
-
-
80155147177
-
Opportunities in chemistry and materials science for topological insulators and their nanostructures
-
Kong, D. & Cui, Y. Opportunities in chemistry and materials science for topological insulators and their nanostructures. Nat. Chem. 3, 845-849 (2011).
-
(2011)
Nat. Chem.
, vol.3
, pp. 845-849
-
-
Kong, D.1
Cui, Y.2
-
38
-
-
84871362038
-
Atomically thick bismuth selenide freestanding single layers achieving enhanced thermoelectric energy harvesting
-
Sun, Y. et al. Atomically thick bismuth selenide freestanding single layers achieving enhanced thermoelectric energy harvesting. J. Am. Chem. Soc. 134, 20294-20297 (2012).
-
(2012)
J. Am. Chem. Soc.
, vol.134
, pp. 20294-20297
-
-
Sun, Y.1
-
39
-
-
84874957462
-
Surfactant-free scalable synthesis of Bi2Te3 and Bi2Se3 nanoflakes and enhanced thermoelectric properties of their nanocomposites
-
Min, Y. et al. Surfactant-free scalable synthesis of Bi2Te3 and Bi2Se3 nanoflakes and enhanced thermoelectric properties of their nanocomposites. Adv. Mater. 25, 1425-1429 (2013).
-
(2013)
Adv. Mater.
, vol.25
, pp. 1425-1429
-
-
Min, Y.1
-
40
-
-
84964719095
-
Enhanced thermoelectric performance of ultrathin Bi2Se3 nanosheets through thickness control
-
Hong, M., Chen, Z., Yang, L., Han, G. & Zou, J. Enhanced thermoelectric performance of ultrathin Bi2Se3 nanosheets through thickness control. Adv. Electron. Mater. 1, 1500025 (2015).
-
(2015)
Adv. Electron. Mater.
, vol.1
, pp. 1500025
-
-
Hong, M.1
Chen, Z.2
Yang, L.3
Han, G.4
Zou, J.5
-
41
-
-
84894262105
-
25th anniversary article: MXenes: A new family of two-dimensional materials
-
Naguib, M., Mochalin, V. N., Barsoum, M. W. & Gogotsi, Y. 25th anniversary article: MXenes: A new family of two-dimensional materials. Adv. Mater. 26, 992-1005 (2014).
-
(2014)
Adv. Mater.
, vol.26
, pp. 992-1005
-
-
Naguib, M.1
Mochalin, V.N.2
Barsoum, M.W.3
Gogotsi, Y.4
-
42
-
-
84904616293
-
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
-
Qiao, J., Kong, X., Hu, Z. X., Yang, F. & Ji, W. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 4475
-
-
Qiao, J.1
Kong, X.2
Hu, Z.X.3
Yang, F.4
Ji, W.5
-
43
-
-
84898060562
-
Phosphorene: An unexplored 2D semiconductor with a high hole mobility
-
Liu, H. et al. Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033-4041 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 4033-4041
-
-
Liu, H.1
-
44
-
-
85019555297
-
Black phosphorus field-effect transistors
-
Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 8, 4033-4041 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.8
, pp. 4033-4041
-
-
Li, L.1
-
45
-
-
64849087987
-
Exfoliated oxide nanosheets: New solution to nanoelectronics
-
Osada, M. & Sasaki, T. Exfoliated oxide nanosheets: new solution to nanoelectronics. J. Mater. Chem. 19, 2503-2511 (2009).
-
(2009)
J. Mater. Chem.
, vol.19
, pp. 2503-2511
-
-
Osada, M.1
Sasaki, T.2
-
46
-
-
0023963885
-
A new high-temperature superconductor: Bi2Sr3 xCax Cu2O8 + y
-
Subramanian, M. et al. A new high-temperature superconductor: Bi2Sr3 xCax Cu2O8 + y. Science 239, 1015-1017 (1988).
-
(1988)
Science
, vol.239
, pp. 1015-1017
-
-
Subramanian, M.1
-
47
-
-
84865095607
-
Recent advances in the synthesis and application of layered double hydroxide (LDH) nanosheets
-
Wang, Q. & O'Hare, D. Recent advances in the synthesis and application of layered double hydroxide (LDH) nanosheets. Chem. Rev. 112, 4124-4155 (2012).
-
(2012)
Chem. Rev.
, vol.112
, pp. 4124-4155
-
-
Wang, Q.1
O'Hare, D.2
-
48
-
-
79953820479
-
Oriented 2D covalent organic famework thin films on single-layer graphene
-
Colson, J. W. et al. Oriented 2D covalent organic famework thin films on single-layer graphene. Science 332, 228-231 (2011).
-
(2011)
Science
, vol.332
, pp. 228-231
-
-
Colson, J.W.1
-
49
-
-
84920986546
-
Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
-
Duan, X. et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol. 9, 1024-1030 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 1024-1030
-
-
Duan, X.1
-
50
-
-
78650343662
-
Fluorographene: A two-dimensional counterpart of teflon
-
Nair, R. R. et al. Fluorographene: A two-dimensional counterpart of teflon. Small 6, 2877-2884 (2010).
-
(2010)
Small
, vol.6
, pp. 2877-2884
-
-
Nair, R.R.1
-
51
-
-
59149091893
-
Control of graphene's properties by reversible hydrogenation: Evidence for graphane
-
Elias, D. C. et al. Control of graphene's properties by reversible hydrogenation: evidence for graphane. Science 323, 610-613 (2009).
-
(2009)
Science
, vol.323
, pp. 610-613
-
-
Elias, D.C.1
-
52
-
-
84957552843
-
Synthesis of WS2xSe2-2x alloy nanosheets with composition-tunable electronic properties
-
Duan, X. et al. Synthesis of WS2xSe2-2x alloy nanosheets with composition-tunable electronic properties. Nano Lett. 16, 264-269 (2016).
-
(2016)
Nano Lett.
, vol.16
, pp. 264-269
-
-
Duan, X.1
-
53
-
-
84928717661
-
Lateral growth of composition graded atomic layer MoS2 (1-x) Se2x nanosheets
-
Li, H. et al. Lateral growth of composition graded atomic layer MoS2 (1-x) Se2x nanosheets. J. Am. Chem. Soc. 137, 5284-5287 (2015).
-
(2015)
J. Am. Chem. Soc.
, vol.137
, pp. 5284-5287
-
-
Li, H.1
-
54
-
-
84938894547
-
CVD synthesis of Mo(1 x)WxS2 and MoS2(1-x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide
-
Zhang, W. et al. CVD synthesis of Mo(1 x)WxS2 and MoS2(1-x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide. Nanoscale 7, 13554-13560 (2015).
-
(2015)
Nanoscale
, vol.7
, pp. 13554-13560
-
-
Zhang, W.1
-
55
-
-
84938153119
-
Growth of MoS2(1-x)Se2x (x = 0. 41-1. 00) monolayer alloys with controlled morphology by physical vapor deposition
-
Feng, Q. et al. Growth of MoS2(1-x)Se2x (x = 0. 41-1. 00) monolayer alloys with controlled morphology by physical vapor deposition. ACS Nano 9, 7450-7455 (2015).
-
(2015)
ACS Nano
, vol.9
, pp. 7450-7455
-
-
Feng, Q.1
-
56
-
-
84940529342
-
Epitaxial growth of a monolayer WSe2-MoS2 lateral pn junction with an atomically sharp interface
-
Li, M. Y. et al. Epitaxial growth of a monolayer WSe2-MoS2 lateral pn junction with an atomically sharp interface. Science 349, 524-528 (2015).
-
(2015)
Science
, vol.349
, pp. 524-528
-
-
Li, M.Y.1
-
57
-
-
84920990685
-
Vertical and inplane heterostructures from WS2/MoS2 monolayers
-
Gong, Y. et al. Vertical and inplane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 13, 1135-1142 (2014).
-
(2014)
Nat. Mater.
, vol.13
, pp. 1135-1142
-
-
Gong, Y.1
-
58
-
-
7444220645
-
Electric field effect in atomically thin carbon films
-
Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004).
-
(2004)
Science
, vol.306
, pp. 666-669
-
-
Novoselov, K.S.1
-
59
-
-
23044442056
-
Two-dimensional atomic crystals
-
Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Nati. Acad. Sci. USA 102, 10451-10453 (2005).
-
(2005)
Proc. Nati. Acad. Sci. USA
, vol.102
, pp. 10451-10453
-
-
Novoselov, K.S.1
-
60
-
-
84879268263
-
Liquid exfoliation of layered materials
-
Nicolosi, V., Chhowalla, M., Kanatzidis, M. G., Strano, M. S. & Coleman, J. N. Liquid exfoliation of layered materials. Science 340, http://dx. doi. org/ 10. 1126/science. 1226419 (2013).
-
(2013)
Science
, pp. 340
-
-
Nicolosi, V.1
Chhowalla, M.2
Kanatzidis, M.G.3
Strano, M.S.4
Coleman, J.N.5
-
61
-
-
84881328607
-
A rational design of cosolvent exfoliation of layered materials by directly probing liquid-solid interaction
-
Halim, U. et al. A rational design of cosolvent exfoliation of layered materials by directly probing liquid-solid interaction. Nat. Commun. 4, 2213 (2013).
-
(2013)
Nat. Commun.
, vol.4
, pp. 2213
-
-
Halim, U.1
-
62
-
-
84960375195
-
2D Transition-metal-dichalcogenide-nanosheet-based composites for photocatalytic and electrocatalytic hydrogen evolution reactions
-
Lu, Q., Yu, Y., Ma, Q., Chen, B. & Zhang, H. 2D Transition-metal-dichalcogenide-nanosheet-based composites for photocatalytic and electrocatalytic hydrogen evolution reactions. Adv. Mater. 28, 1917-1933 (2016).
-
(2016)
Adv. Mater.
, vol.28
, pp. 1917-1933
-
-
Lu, Q.1
Yu, Y.2
Ma, Q.3
Chen, B.4
Zhang, H.5
-
63
-
-
77955566830
-
Large scale growth and characterization of atomic hexagonal boron nitride layers
-
Song, L. et al. Large scale growth and characterization of atomic hexagonal boron nitride layers. Nano Lett. 10, 3209-3215 (2010).
-
(2010)
Nano Lett.
, vol.10
, pp. 3209-3215
-
-
Song, L.1
-
64
-
-
84892163356
-
Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges
-
Liu, L. et al. Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges. Science 343, 163-167 (2014).
-
(2014)
Science
, vol.343
, pp. 163-167
-
-
Liu, L.1
-
65
-
-
84946826772
-
Synthesis of high quality two-dimensional materials via chemical vapor deposition
-
Yu, J. Li, J., Zhang, W. & Chang, H. Synthesis of high quality two-dimensional materials via chemical vapor deposition. Chem. Sci. 6, 6705-6716 (2015).
-
(2015)
Chem. Sci.
, vol.6
, pp. 6705-6716
-
-
Yu, J.1
Li, J.2
Zhang, W.3
Chang, H.4
-
66
-
-
84941424032
-
Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy
-
Lu, G. et al. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy. Nat. Commun. 6, 6160 (2015).
-
(2015)
Nat. Commun.
, vol.6
, pp. 6160
-
-
Lu, G.1
-
67
-
-
84949255293
-
Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu-Ni alloys
-
Wu, T. et al. Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu-Ni alloys. Nat. Mater. 15, 43-47 (2016).
-
(2016)
Nat. Mater.
, vol.15
, pp. 43-47
-
-
Wu, T.1
-
68
-
-
84938844603
-
Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
-
Andres, C. G. et al. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. 2D Mater. 1, 011002 (2014).
-
(2014)
2D Mater.
, vol.1
, pp. 011002
-
-
Andres, C.G.1
-
69
-
-
83455172686
-
A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
-
Zomer, P. J., Dash, S. P., Tombros, N. & Wees, B. J. A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride. Appl. Phys. Lett. 99, 232104 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.99
, pp. 232104
-
-
Zomer, P.J.1
Dash, S.P.2
Tombros, N.3
Wees, B.J.4
-
70
-
-
84887299269
-
One-dimensional electrical contact to a two-dimensional material
-
Wang, L. et al. One-dimensional electrical contact to a two-dimensional material. Science. 342, 614-617 (2013).
-
(2013)
Science.
, vol.342
, pp. 614-617
-
-
Wang, L.1
-
71
-
-
84866379080
-
Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
-
Haigh, S. J. et al. Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices. Nat. Mater. 11, 764-767 (2012).
-
(2012)
Nat. Mater.
, vol.11
, pp. 764-767
-
-
Haigh, S.J.1
-
72
-
-
84944315765
-
Direct growth of single-and few-layer MoS2 on hBN with preferred relative rotation angles
-
Yan, A. et al. Direct growth of single-and few-layer MoS2 on hBN with preferred relative rotation angles. Nano Lett. 15, 6324-6331 (2015).
-
(2015)
Nano Lett.
, vol.15
, pp. 6324-6331
-
-
Yan, A.1
-
73
-
-
84901986223
-
Commensurate-incommensurate transition in graphene on hexagonal boron nitride
-
Woods, C. R. et al. Commensurate-incommensurate transition in graphene on hexagonal boron nitride. Nat. Phys. 10, 451-456 (2014).
-
(2014)
Nat. Phys.
, vol.10
, pp. 451-456
-
-
Woods, C.R.1
-
74
-
-
84929173433
-
Towards barrier free contact to molybdenum disulfide using graphene electrodes
-
Liu, Y. et al. Towards barrier free contact to molybdenum disulfide using graphene electrodes. Nano Lett. 15, 3030-3034 (2015).
-
(2015)
Nano Lett.
, vol.15
, pp. 3030-3034
-
-
Liu, Y.1
-
75
-
-
84930476811
-
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
-
Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534-540 (2015).
-
(2015)
Nat. Nanotechnol.
, vol.10
, pp. 534-540
-
-
Cui, X.1
-
76
-
-
84929092019
-
Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors
-
Avsar, A. et al. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. ACS Nano 9, 4138-4145 (2015).
-
(2015)
ACS Nano
, vol.9
, pp. 4138-4145
-
-
Avsar, A.1
-
77
-
-
84957874175
-
Van der Waals heterojunction devices based on organohalide perovskites and two-dimensional materials
-
Cheng, H. C. et al. Van der Waals heterojunction devices based on organohalide perovskites and two-dimensional materials. Nano Lett. 16, 367-373 (2016).
-
(2016)
Nano Lett.
, vol.16
, pp. 367-373
-
-
Cheng, H.C.1
-
78
-
-
84871807243
-
Very Large current modulation in vertical heterostructure graphene/hBN transistors
-
Fiori, G., Bruzzone, S. & Iannaccone, G. Very Large current modulation in vertical heterostructure graphene/hBN transistors. IEEE Trans. Electron Devices 60, 268-273 (2013).
-
(2013)
IEEE Trans. Electron Devices
, vol.60
, pp. 268-273
-
-
Fiori, G.1
Bruzzone, S.2
Iannaccone, G.3
-
79
-
-
84860492111
-
Emergence of superlattice Dirac points in graphene on hexagonal boron nitride
-
Yankowitz, M. et al. Emergence of superlattice Dirac points in graphene on hexagonal boron nitride. Nat. Phys. 8, 382-386 (2012).
-
(2012)
Nat. Phys.
, vol.8
, pp. 382-386
-
-
Yankowitz, M.1
-
80
-
-
79953031816
-
Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride
-
Xue, J. et al. Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. Nat. Mater. 10, 282-285 (2011).
-
(2011)
Nat. Mater.
, vol.10
, pp. 282-285
-
-
Xue, J.1
-
81
-
-
84872845513
-
Evolution of electronic structure in atomically thin sheets of WS2 and WSe2
-
Zhao, W. et al. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. ACS Nano 7, 791-797 (2012).
-
(2012)
ACS Nano
, vol.7
, pp. 791-797
-
-
Zhao, W.1
-
82
-
-
84907876410
-
Tunable transport gap in phosphorene
-
Das, S. et al. Tunable transport gap in phosphorene. Nano Lett. 14, 5733-5739 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 5733-5739
-
-
Das, S.1
-
83
-
-
84921481158
-
Spectroscopic signatures for interlayer coupling in MoS2-WSe2 van der Waals stacking
-
Chiu, M. H. et al. Spectroscopic signatures for interlayer coupling in MoS2-WSe2 van der Waals stacking. ACS Nano 8, 9649-9656 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 9649-9656
-
-
Chiu, M.H.1
-
84
-
-
85028192987
-
Tunable metal-insulator transition in double-layer graphene heterostructures
-
Ponomarenko, L. A. et al. Tunable metal-insulator transition in double-layer graphene heterostructures. Nat. Phys. 7, 958-961 (2011).
-
(2011)
Nat. Phys.
, vol.7
, pp. 958-961
-
-
Ponomarenko, L.A.1
-
85
-
-
84899634522
-
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
-
Fang, H. et al. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proc. Nati. Acad. Sci. USA 111, 6198-6202 (2014).
-
(2014)
Proc. Nati. Acad. Sci. USA
, vol.111
, pp. 6198-6202
-
-
Fang, H.1
-
86
-
-
84923315662
-
Evolution of interlayer coupling in twisted molybdenum disulfide bilayers
-
Liu, K. et al. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers. Nat. Commun. 5, 4966 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 4966
-
-
Liu, K.1
-
87
-
-
84926231488
-
Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures
-
Hong, X. et al. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 9, 682-686 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 682-686
-
-
Hong, X.1
-
88
-
-
84923914376
-
Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures
-
Rivera, P. et al. Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures. Nat. Commun. 6, 6242 (2015).
-
(2015)
Nat. Commun.
, vol.6
, pp. 6242
-
-
Rivera, P.1
-
89
-
-
84945156274
-
Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure
-
Ceballos, F., Bellus, M. Z., Chiu, H. Y. & Zhao, H. Probing charge transfer excitons in a MoSe2-WS2 van der Waals heterostructure. Nanoscale 7, 17523-17528 (2015).
-
(2015)
Nanoscale
, vol.7
, pp. 17523-17528
-
-
Ceballos, F.1
Bellus, M.Z.2
Chiu, H.Y.3
Zhao, H.4
-
90
-
-
84935012644
-
Tightly bound trions in transition metal dichalcogenide heterostructures
-
Bellus, M. Z., Ceballos, F., Chiu, H. Y. & Zhao, H. Tightly bound trions in transition metal dichalcogenide heterostructures. ACS Nano 9, 6459-6464 (2015).
-
(2015)
ACS Nano
, vol.9
, pp. 6459-6464
-
-
Bellus, M.Z.1
Ceballos, F.2
Chiu, H.Y.3
Zhao, H.4
-
91
-
-
84910121533
-
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
-
Cheng, R. et al. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 5, 5143 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 5143
-
-
Cheng, R.1
-
92
-
-
84947805505
-
Electrical contacts to two-dimensional semiconductors
-
Allain, A., Kang, J., Banerjee, K. & Kis, A. Electrical contacts to two-dimensional semiconductors. Nat. Mater. 14, 1195-1205 (2015).
-
(2015)
Nat. Mater.
, vol.14
, pp. 1195-1205
-
-
Allain, A.1
Kang, J.2
Banerjee, K.3
Kis, A.4
-
93
-
-
84872115141
-
High performance multilayer MoS2 transistors with scandium contacts
-
Das, S., Chen, H. Y., Penumatcha, A. V. & Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100-105 (2012).
-
(2012)
Nano Lett.
, vol.13
, pp. 100-105
-
-
Das, S.1
Chen, H.Y.2
Penumatcha, A.V.3
Appenzeller, J.4
-
94
-
-
84947240042
-
Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode
-
Qu, D., Liu, X., Ahmed, F., Lee, D. & Yoo, W. J. Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode. Nanoscale 7, 19273-19281 (2015).
-
(2015)
Nanoscale
, vol.7
, pp. 19273-19281
-
-
Qu, D.1
Liu, X.2
Ahmed, F.3
Lee, D.4
Yoo, W.J.5
-
95
-
-
84903437984
-
Field-effect transistors built from all two-dimensional material components
-
Roy, T. et al. Field-effect transistors built from all two-dimensional material components. ACS Nano 8, 6259-6264 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 6259-6264
-
-
Roy, T.1
-
96
-
-
84902275085
-
High mobility WSe2 pand ntype field-effect transistors contacted by highly doped graphene for low-resistance contacts
-
Chuang, H. J. et al. High mobility WSe2 pand ntype field-effect transistors contacted by highly doped graphene for low-resistance contacts. Nano Lett. 14, 3594-3601 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 3594-3601
-
-
Chuang, H.J.1
-
97
-
-
84900508929
-
All two-dimensional, flexible, transparent, and thinnest thin film transistor
-
Das, S., Gulotty, R., Sumant, A. V. & Roelofs, A. All two-dimensional, flexible, transparent, and thinnest thin film transistor. Nano Lett. 14, 2861-2866 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 2861-2866
-
-
Das, S.1
Gulotty, R.2
Sumant, A.V.3
Roelofs, A.4
-
98
-
-
84879650910
-
Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes
-
Yoon, J. et al. Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes. Small 9, 3295-3300 (2013).
-
(2013)
Small
, vol.9
, pp. 3295-3300
-
-
Yoon, J.1
-
99
-
-
84902277236
-
Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics
-
Yu, L. et al. Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics. Nano Lett. 14, 3055-3063 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 3055-3063
-
-
Yu, L.1
-
100
-
-
84938118601
-
Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal noron nitride with gate-controllable contact, resistance, and threshold Voltage
-
Lee, G. H. et al. Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal noron nitride with gate-controllable contact, resistance, and threshold Voltage. ACS Nano 9, 7019-7026 (2015).
-
(2015)
ACS Nano
, vol.9
, pp. 7019-7026
-
-
Lee, G.H.1
-
101
-
-
84880179070
-
Where does the current flow in two-dimensional layered systems
-
Das, S. & Appenzeller, J. Where does the current flow in two-dimensional layered systems Nano Lett. 13, 3396-3402 (2013).
-
(2013)
Nano Lett.
, vol.13
, pp. 3396-3402
-
-
Das, S.1
Appenzeller, J.2
-
102
-
-
84876423277
-
Screening and interlayer coupling in multilayer MoS2
-
Das, S. & Appenzeller, J. Screening and interlayer coupling in multilayer MoS2. Phys. Stat. Sol. 7, 268-273 (2013).
-
(2013)
Phys. Stat. Sol.
, vol.7
, pp. 268-273
-
-
Das, S.1
Appenzeller, J.2
-
103
-
-
84952333530
-
Does ptype ohmic contact exist in WSe2-metal interfaces
-
Wang, Y. et al. Does ptype ohmic contact exist in WSe2-metal interfaces Nanoscale 8, 1179-1191 (2016).
-
(2016)
Nanoscale
, vol.8
, pp. 1179-1191
-
-
Wang, Y.1
-
104
-
-
84896779852
-
High-performance MoS2 transistors with low-resistance molybdenum contacts
-
Kang, J., Liu, W. & Banerjee, K. High-performance MoS2 transistors with low-resistance molybdenum contacts. Appl. Phys. Lett. 104, 093106 (2014).
-
(2014)
Appl. Phys. Lett.
, vol.104
, pp. 093106
-
-
Kang, J.1
Liu, W.2
Banerjee, K.3
-
105
-
-
84910125463
-
Chloride molecular doping technique on 2D materials: WS2 and MoS2
-
Yang, L. et al. Chloride molecular doping technique on 2D materials: WS2 and MoS2. Nano Lett. 14, 6275-6280 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 6275-6280
-
-
Yang, L.1
-
106
-
-
85027951220
-
Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
-
Kappera, R. et al. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 13, 1128-1134 (2014).
-
(2014)
Nat. Mater.
, vol.13
, pp. 1128-1134
-
-
Kappera, R.1
-
107
-
-
84901930740
-
Air-stable surface charge transfer doping of MoS2 by benzyl viologen
-
Kiriya, D., Tosun, M., Zhao, P., Kang, J. S. & Javey, A. Air-stable surface charge transfer doping of MoS2 by benzyl viologen. J. Am. Chem. Soc. 136, 7853-7856 (2014).
-
(2014)
J. Am. Chem. Soc.
, vol.136
, pp. 7853-7856
-
-
Kiriya, D.1
Tosun, M.2
Zhao, P.3
Kang, J.S.4
Javey, A.5
-
108
-
-
84921813856
-
Low resistance metal contacts to MoS2 devices with nickel-etched-graphene electrodes
-
Leong, W. S. et al. Low resistance metal contacts to MoS2 devices with nickel-etched-graphene electrodes. ACS Nano 9, 869-877 (2014).
-
(2014)
ACS Nano
, vol.9
, pp. 869-877
-
-
Leong, W.S.1
-
109
-
-
84899727876
-
Field-effect transistors with graphene/ metal heterocontacts
-
Du, Y. et al. Field-effect transistors with graphene/ metal heterocontacts. IEEE Electron Device Lett. 35, 599-601 (2014).
-
(2014)
IEEE Electron Device Lett.
, vol.35
, pp. 599-601
-
-
Du, Y.1
-
110
-
-
84926042922
-
2D crystal semiconductors: Intimate contacts
-
Jena, D., Banerjee, K. & Xing, G. H. 2D crystal semiconductors: intimate contacts. Nat. Mater. 13, 1076-1078 (2014).
-
(2014)
Nat. Mater.
, vol.13
, pp. 1076-1078
-
-
Jena, D.1
Banerjee, K.2
Xing, G.H.3
-
111
-
-
84906534588
-
-
Santa Barbara
-
English, C. D., Shine, G., Dorgan, V. E., Saraswat, K. C. & Pop, E. in 72nd Device Research Conference 193-194 (Santa Barbara, 2014).
-
(2014)
72nd Device Research Conference
, pp. 193-194
-
-
English, C.D.1
Shine, G.2
Dorgan, V.E.3
Saraswat, K.C.4
Pop, E.5
-
112
-
-
80052595719
-
Graphene adhesion on MoS2 monolayer: An ab initio study
-
Ma, Y., Dai, Y., Guo, M., Niu, C. & Huang, B. Graphene adhesion on MoS2 monolayer: An ab initio study. Nanoscale 3, 3883-3887 (2011).
-
(2011)
Nanoscale
, vol.3
, pp. 3883-3887
-
-
Ma, Y.1
Dai, Y.2
Guo, M.3
Niu, C.4
Huang, B.5
-
113
-
-
84905737252
-
Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors
-
Kang, J., Liu, W., Sarkar, D., Jena, D. & Banerjee, K. Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors. Phys. Rev. X 4, 031005 (2014).
-
(2014)
Phys. Rev. X
, vol.4
, pp. 031005
-
-
Kang, J.1
Liu, W.2
Sarkar, D.3
Jena, D.4
Banerjee, K.5
-
114
-
-
84939229567
-
Phase patterning for ohmic homojunction contact in MoTe2
-
Cho, S. et al. Phase patterning for ohmic homojunction contact in MoTe2. Science 349, 625-628 (2015).
-
(2015)
Science
, vol.349
, pp. 625-628
-
-
Cho, S.1
-
115
-
-
85027937411
-
Performance potential and limit of MoS2 transistors
-
Li, X. et al. Performance potential and limit of MoS2 transistors. Adv. Mater. 27, 1547-1552 (2015).
-
(2015)
Adv. Mater.
, vol.27
, pp. 1547-1552
-
-
Li, X.1
-
116
-
-
84875416311
-
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
-
Yu, W. J. et al. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat. Mater. 12, 246-252 (2013).
-
(2013)
Nat. Mater.
, vol.12
, pp. 246-252
-
-
Yu, W.J.1
-
117
-
-
84946077261
-
Vertical field effect transistor based on graphene/transition metal dichalcogenide van der Waals heterostructure
-
Moriya, R. et al. Vertical field effect transistor based on graphene/transition metal dichalcogenide van der Waals heterostructure. ECS Trans. 69, 357-363 (2015).
-
(2015)
ECS Trans.
, vol.69
, pp. 357-363
-
-
Moriya, R.1
-
118
-
-
84873570571
-
Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics
-
Georgiou, T. et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 8, 100-103 (2013).
-
(2013)
Nat. Nanotechnol.
, vol.8
, pp. 100-103
-
-
Georgiou, T.1
-
119
-
-
84907302877
-
Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
-
Moriya, R. et al. Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures. Appl. Phys. Lett. 105, 083119 (2014).
-
(2014)
Appl. Phys. Lett.
, vol.105
, pp. 083119
-
-
Moriya, R.1
-
120
-
-
84930665695
-
Influence of the density of states of graphene on the transport properties of graphene/ MoS2/metal vertical field-effect transistors
-
Moriya, R. et al. Influence of the density of states of graphene on the transport properties of graphene/ MoS2/metal vertical field-effect transistors. Appl. Phys. Lett. 106, 223103 (2015).
-
(2015)
Appl. Phys. Lett.
, vol.106
, pp. 223103
-
-
Moriya, R.1
-
121
-
-
84937459193
-
Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
-
Sata, Y. et al. Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface. Appl. Phys. Lett. 107, 023109 (2015).
-
(2015)
Appl. Phys. Lett.
, vol.107
, pp. 023109
-
-
Sata, Y.1
-
122
-
-
84861659653
-
Graphene barristor, a triode device with a gate-controlled Schottky barrier
-
Yang, H. et al. Graphene barristor, a triode device with a gate-controlled Schottky barrier. Science 336, 1140-1143 (2012).
-
(2012)
Science
, vol.336
, pp. 1140-1143
-
-
Yang, H.1
-
123
-
-
84890317131
-
Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics
-
Heo, J. et al. Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics. Nano Lett. 13, 5967-5971 (2013).
-
(2013)
Nano Lett.
, vol.13
, pp. 5967-5971
-
-
Heo, J.1
-
124
-
-
84896363444
-
Highly flexible electronics from scalable vertical thin film transistors
-
Liu, Y. et al. Highly flexible electronics from scalable vertical thin film transistors. Nano Lett. 14, 1413-1418 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 1413-1418
-
-
Liu, Y.1
-
125
-
-
84929621520
-
Gate-controlled energy barrier at a graphene/molecular semiconductor junction
-
Parui, S. et al. Gate-controlled energy barrier at a graphene/molecular semiconductor junction. Adv. Funct. Mater. 25, 2972-2979 (2015).
-
(2015)
Adv. Funct. Mater.
, vol.25
, pp. 2972-2979
-
-
Parui, S.1
-
126
-
-
84867834318
-
Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors
-
Lemaitre, M. G. et al. Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors. ACS Nano 6, 9095-9102 (2012).
-
(2012)
ACS Nano
, vol.6
, pp. 9095-9102
-
-
Lemaitre, M.G.1
-
127
-
-
84921057125
-
Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures
-
Hlaing, H. et al. Low-voltage organic electronics based on a gate-tunable injection barrier in vertical graphene-organic semiconductor heterostructures. Nano Lett. 15, 69-74 (2014).
-
(2014)
Nano Lett.
, vol.15
, pp. 69-74
-
-
Hlaing, H.1
-
128
-
-
84918812212
-
Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors
-
He, D. et al. Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors. Nat. Commun. 5, 5162 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 5162
-
-
He, D.1
-
129
-
-
84948403621
-
High-performance organic vertical thin film transistor using graphene as a tunable contact
-
Liu, Y., Zhou, H., Weiss, N. O., Huang, Y. & Duan, X. High-performance organic vertical thin film transistor using graphene as a tunable contact. ACS Nano 9, 11102-11108 (2015).
-
(2015)
ACS Nano
, vol.9
, pp. 11102-11108
-
-
Liu, Y.1
Zhou, H.2
Weiss, N.O.3
Huang, Y.4
Duan, X.5
-
130
-
-
84934895996
-
Structural and electrical investigation of C60-graphene vertical heterostructures
-
Kim, K. et al. Structural and electrical investigation of C60-graphene vertical heterostructures. ACS Nano 9, 5922-5928 (2015).
-
(2015)
ACS Nano
, vol.9
, pp. 5922-5928
-
-
Kim, K.1
-
131
-
-
19744366972
-
Bandtoband tunneling in carbon nanotube field-effect transistors
-
Appenzeller, J., Lin, Y. M., Knoch, J. & Avouris, P. Bandtoband tunneling in carbon nanotube field-effect transistors. Phys. Rev. Lett. 93, 196805 (2004).
-
(2004)
Phys. Rev. Lett.
, vol.93
, pp. 196805
-
-
Appenzeller, J.1
Lin, Y.M.2
Knoch, J.3
Avouris, P.4
-
132
-
-
36549091403
-
Quantum capacitance devices
-
Luryi, S. Quantum capacitance devices. Appl. Phys. Lett. 52, 501-503 (1988).
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 501-503
-
-
Luryi, S.1
-
133
-
-
84857567921
-
Field-effect tunneling transistor based on vertical graphene heterostructures
-
Britnell, L. et al. Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947-950 (2012).
-
(2012)
Science
, vol.335
, pp. 947-950
-
-
Britnell, L.1
-
134
-
-
84877747763
-
Resonant tunnelling and negative differential conductance in graphene transistors
-
Britnell, L. et al. Resonant tunnelling and negative differential conductance in graphene transistors. Nat. Commun. 4, 1794 (2013).
-
(2013)
Nat. Commun.
, vol.4
, pp. 1794
-
-
Britnell, L.1
-
135
-
-
84915775124
-
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
-
Mishchenko, A. et al. Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nat. Nanotechnol. 9, 808-813 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 808-813
-
-
Mishchenko, A.1
-
136
-
-
84949320833
-
Resonant tunnelling between the chiral Landau states of twisted graphene lattices
-
Greenaway, M. et al. Resonant tunnelling between the chiral Landau states of twisted graphene lattices. Nat. Phys. 11, 1057-1062 (2015).
-
(2015)
Nat. Phys.
, vol.11
, pp. 1057-1062
-
-
Greenaway, M.1
-
137
-
-
84963591529
-
High Current density vertical tunneling transistors from graphene/highly-doped silicon heterostructures
-
Liu, Y. et al. High Current density vertical tunneling transistors from graphene/highly-doped silicon heterostructures. Adv. Mater. 28, 4120-4125 (2016).
-
(2016)
Adv. Mater.
, vol.28
, pp. 4120-4125
-
-
Liu, Y.1
-
139
-
-
84898624412
-
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions
-
Ross, J. S. et al. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions. Nat. Nanotechnol. 9, 268-272 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 268-272
-
-
Ross, J.S.1
-
140
-
-
84898664628
-
Solar-energy conversion and light emission in an atomic monolayer p-n diode
-
Pospischil, A., Furchi, M. M. & Mueller, T. Solar-energy conversion and light emission in an atomic monolayer p-n diode. Nat. Nanotechnol. 9, 257-261 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 257-261
-
-
Pospischil, A.1
Furchi, M.M.2
Mueller, T.3
-
141
-
-
84898614268
-
Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide
-
Baugher, B. W. H., Churchill, H. O. H., Yang, Y. & Jarillo-Herrero, P. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. Nat. Nanotechnol. 9, 262-267 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 262-267
-
-
Baugher, B.W.H.1
Churchill, H.O.H.2
Yang, Y.3
Jarillo-Herrero, P.4
-
142
-
-
84943167066
-
A subthermionic tunnel field-effect transistor with an atomically thin channel
-
Sarkar, D. et al. A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature 526, 91-95 (2015).
-
(2015)
Nature
, vol.526
, pp. 91-95
-
-
Sarkar, D.1
-
143
-
-
84923519221
-
Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors
-
Roy, T. et al. Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors. ACS Nano 9, 2071-2079 (2015).
-
(2015)
ACS Nano
, vol.9
, pp. 2071-2079
-
-
Roy, T.1
-
144
-
-
84887279609
-
Gate-tunable carbon nanotube-MoS2 heterojunction pn diode
-
Jariwala, D. et al. Gate-tunable carbon nanotube-MoS2 heterojunction pn diode. Proc. Natl. Acad. Sci. USA 110, 18076-18080 (2013).
-
(2013)
Proc. Natl. Acad. Sci. USA
, vol.110
, pp. 18076-18080
-
-
Jariwala, D.1
-
145
-
-
84879830456
-
Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes
-
Chuang, S. et al. Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes. Appl. Phys. Lett. 102, 242101 (2013).
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 242101
-
-
Chuang, S.1
-
146
-
-
84906087474
-
Photovoltaic effect in an electrically tunable van der Waals heterojunction
-
Furchi, M. M., Pospischil, A., Libisch, F., Burgdorfer, J. & Mueller, T. Photovoltaic effect in an electrically tunable van der Waals heterojunction. Nano Lett. 14, 4785-4791 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 4785-4791
-
-
Furchi, M.M.1
Pospischil, A.2
Libisch, F.3
Burgdorfer, J.4
Mueller, T.5
-
147
-
-
84904735196
-
Large-area single-layer MoSe2 and its van der Waals heterostructures
-
Shim, G. W. et al. Large-area single-layer MoSe2 and its van der Waals heterostructures. ACS Nano 8, 6655-6662 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 6655-6662
-
-
Shim, G.W.1
-
148
-
-
84926231397
-
Atomically thin p-n junctions with van der Waals heterointerfaces
-
Lee, C. H. et al. Atomically thin p-n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 9, 676-681 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 676-681
-
-
Lee, C.H.1
-
149
-
-
84922786931
-
Vertical heterostructure of two-dimensional MoS2 and WSe2 with vertically aligned layers
-
Yu, J. H. et al. Vertical heterostructure of two-dimensional MoS2 and WSe2 with vertically aligned layers. Nano Lett. 15, 1031-1035 (2015).
-
(2015)
Nano Lett.
, vol.15
, pp. 1031-1035
-
-
Yu, J.H.1
-
150
-
-
84906663902
-
Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode
-
Deng, Y. et al. Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. ACS Nano 8, 8292-8299 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 8292-8299
-
-
Deng, Y.1
-
151
-
-
84907880386
-
Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes
-
Cheng, R. et al. Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes. Nano Lett. 14, 5590-5597 (2014).
-
(2014)
Nano Lett.
, vol.14
, pp. 5590-5597
-
-
Cheng, R.1
-
152
-
-
84924873506
-
Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation
-
Jeon, P. J. et al. Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation. J. Mater. Chem. C 3, 2751-2758 (2015).
-
(2015)
J. Mater. Chem. C
, vol.3
, pp. 2751-2758
-
-
Jeon, P.J.1
-
153
-
-
84946882266
-
Tunable GaTe-MoS2 van der Waals pn junctions with novel optoelectronic performance
-
Wang, F. et al. Tunable GaTe-MoS2 van der Waals pn junctions with novel optoelectronic performance. Nano Lett. 15, 7558-7566 (2015).
-
(2015)
Nano Lett.
, vol.15
, pp. 7558-7566
-
-
Wang, F.1
-
154
-
-
84942194935
-
Van der Waals p-n junction based on an organic-inorganic heterostructure
-
Liu, F. et al. Van der Waals p-n junction based on an organic-inorganic heterostructure. Adv. Funct. Mater. 25, 5865-5871 (2015).
-
(2015)
Adv. Funct. Mater.
, vol.25
, pp. 5865-5871
-
-
Liu, F.1
-
155
-
-
84920972433
-
Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors
-
Jariwala, D. et al. Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors. Nano Lett. 15, 416-421 (2014).
-
(2014)
Nano Lett.
, vol.15
, pp. 416-421
-
-
Jariwala, D.1
-
156
-
-
84908541914
-
Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions
-
Lam, K. T., Seol, G. & Guo, J. Operating principles of vertical transistors based on monolayer two-dimensional semiconductor heterojunctions. Appl. Phys. Lett. 105, 013112 (2014).
-
(2014)
Appl. Phys. Lett.
, vol.105
, pp. 013112
-
-
Lam, K.T.1
Seol, G.2
Guo, J.3
-
157
-
-
84887078659
-
Chip-integrated ultrafast graphene photodetector with high responsivity
-
Gan, X. et al. Chip-integrated ultrafast graphene photodetector with high responsivity. Nat. Photonics 7, 883-887 (2013).
-
(2013)
Nat. Photonics
, vol.7
, pp. 883-887
-
-
Gan, X.1
-
158
-
-
84887040402
-
CMOS-compatible graphene photodetector covering all optical communication bands
-
Pospischil, A. et al. CMOS-compatible graphene photodetector covering all optical communication bands. Nat. Photonics 7, 892-896 (2013).
-
(2013)
Nat. Photonics
, vol.7
, pp. 892-896
-
-
Pospischil, A.1
-
159
-
-
84887064844
-
High-responsivity graphene/silicon-heterostructure waveguide photodetectors
-
Wang, X., Cheng, Z., Xu, K., Tsang, H. K. & Xu, J. B. High-responsivity graphene/silicon-heterostructure waveguide photodetectors. Nat. Photonics 7, 888-891 (2013).
-
(2013)
Nat. Photonics
, vol.7
, pp. 888-891
-
-
Wang, X.1
Cheng, Z.2
Xu, K.3
Tsang, H.K.4
Xu, J.B.5
-
160
-
-
84946925209
-
High-responsivity graphene-boron nitride photodetector and autocorrelator in a silicon photonic integrated circuit
-
Shiue, R. J. et al. High-responsivity graphene-boron nitride photodetector and autocorrelator in a silicon photonic integrated circuit. Nano Lett. 15, 7288-7293 (2015).
-
(2015)
Nano Lett.
, vol.15
, pp. 7288-7293
-
-
Shiue, R.J.1
-
161
-
-
79960272874
-
Intrinsic response time of graphene photodetectors
-
Urich, A., Unterrainer, K. & Mueller, T. Intrinsic response time of graphene photodetectors. Nano Lett. 11, 2804-2808 (2011).
-
(2011)
Nano Lett.
, vol.11
, pp. 2804-2808
-
-
Urich, A.1
Unterrainer, K.2
Mueller, T.3
-
162
-
-
84863716285
-
Optical spectroscopy of graphene: From the far infrared to the ultraviolet
-
Mak, K. F., Ju, L., Wang, F. & Heinz, T. F. Optical spectroscopy of graphene: from the far infrared to the ultraviolet. Solid State Commun. 152, 1341-1349 (2012).
-
(2012)
Solid State Commun.
, vol.152
, pp. 1341-1349
-
-
Mak, K.F.1
Ju, L.2
Wang, F.3
Heinz, T.F.4
-
163
-
-
77956280459
-
Graphene photonics and optoelectronics
-
Bonaccorso, F., Sun, Z., Hasan, T. & Ferrari, A. C. Graphene photonics and optoelectronics. Nat. Photonics 4, 611-622 (2010).
-
(2010)
Nat. Photonics
, vol.4
, pp. 611-622
-
-
Bonaccorso, F.1
Sun, Z.2
Hasan, T.3
Ferrari, A.C.4
-
164
-
-
80052396957
-
Strong plasmonic enhancement of photovoltage in graphene
-
Echtermeyer, T. et al. Strong plasmonic enhancement of photovoltage in graphene. Nat. Commun. 2, 458 (2011).
-
(2011)
Nat. Commun.
, vol.2
, pp. 458
-
-
Echtermeyer, T.1
-
165
-
-
84884880701
-
Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides
-
Carvalho, A., Ribeiro, R. M. & Castro Neto, A. H. Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides. Phys. Rev. B 88, 115205 (2013).
-
(2013)
Phys. Rev. B
, vol.88
, pp. 115205
-
-
Carvalho, A.1
Ribeiro, R.M.2
Castro Neto, A.H.3
-
166
-
-
84905264315
-
Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides
-
Kozawa, D. et al. Photocarrier relaxation pathway in two-dimensional semiconducting transition metal dichalcogenides. Nat. Commun. 5, 4543 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 4543
-
-
Kozawa, D.1
-
167
-
-
84878942676
-
Strong light-matter interactions in heterostructures of atomically thin films
-
Britnell, L. et al. Strong light-matter interactions in heterostructures of atomically thin films. Science 340, 1311-1314 (2013).
-
(2013)
Science
, vol.340
, pp. 1311-1314
-
-
Britnell, L.1
-
168
-
-
84890561318
-
Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials
-
Yu, W. J et al. Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat. Nanotechnol. 8, 952-958 (2013).
-
(2013)
Nat. Nanotechnol.
, vol.8
, pp. 952-958
-
-
Yu, W.J.1
-
169
-
-
84954384112
-
Picosecond photoresponse in van der Waals heterostructures
-
Massicotte, M. et al. Picosecond photoresponse in van der Waals heterostructures. Nat. Nanotechnol. 11, 42-46 (2016).
-
(2016)
Nat. Nanotechnol.
, vol.11
, pp. 42-46
-
-
Massicotte, M.1
-
170
-
-
84896937669
-
Light generation and harvesting in a van der Waals heterostructure
-
Lopez-Sanchez, O. et al. Light generation and harvesting in a van der Waals heterostructure. ACS Nano 8, 3042-3048 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 3042-3048
-
-
Lopez-Sanchez, O.1
-
171
-
-
21544440695
-
Direct observation of electron leakage in InGaAsP/InP double heterostructure
-
Yamakoshi, S., Sanada, T., Wada, O., Umebu, I. & Sakurai, T. Direct observation of electron leakage in InGaAsP/InP double heterostructure. Appl. Phys. Lett. 40, 144-146 (1982).
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 144-146
-
-
Yamakoshi, S.1
Sanada, T.2
Wada, O.3
Umebu, I.4
Sakurai, T.5
-
172
-
-
84949642283
-
WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
-
Withers, F. et al. WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature. Nano Lett. 15, 8223-8228 (2015).
-
(2015)
Nano Lett.
, vol.15
, pp. 8223-8228
-
-
Withers, F.1
-
173
-
-
84935114565
-
Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide
-
Li, D. et al. Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide. Nat. Commun. 6, 7509 (2015).
-
(2015)
Nat. Commun.
, vol.6
, pp. 7509
-
-
Li, D.1
-
174
-
-
84893442456
-
High-sensitivity photodetectors based on multilayer GaTe flakes
-
Liu, F. et al. High-sensitivity photodetectors based on multilayer GaTe flakes. ACS Nano 8, 752-760 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 752-760
-
-
Liu, F.1
-
175
-
-
0025415197
-
Optical properties of In2Se3 phases
-
Julien, C., Chevy, A. & Siapkas, D. Optical properties of In2Se3 phases. Phys. Status Solidi A 118, 553-559 (1990).
-
(1990)
Phys. Status Solidi A
, vol.118
, pp. 553-559
-
-
Julien, C.1
Chevy, A.2
Siapkas, D.3
|