Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors

Applied Physics Letters

Volumn 106, Issue 22, 2015, Pages

  Moriya, Rai ^a   Yamaguchi, Takehiro ^a   Inoue, Yoshihisa ^a   Sata, Yohta ^a   Morikawa, Sei ^a   Masubuchi, Satoru ^a,b   Machida, Tomoki ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FERMI LEVEL; GRAPHENE; MOLYBDENUM COMPOUNDS; VAN DER WAALS FORCES;

BACK-GATE VOLTAGES; DENSITY OF STATE; DRIVING CURRENT; EXTERNAL ELECTRIC FIELD; METAL LAYER; TRANSPORT MEASUREMENTS; VAN DER WAALS; VERTICAL FIELD EFFECT TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 84930665695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4921920     Document Type: Article

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