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Nanoscale

Volumn 7, Issue 45, 2015, Pages 19273-19281

Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode

(5) Qu, Deshun a Liu, Xiaochi a Ahmed, Faisal a,b Lee, Daeyeong a Yoo, Won Jong a

a Sungkyunkwan University (South Korea)

b Sungkyunkwan University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER TRANSPORT; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GRAPHENE; GRAPHITE ELECTRODES; HALL MOBILITY; HOLE MOBILITY; LAYERED SEMICONDUCTORS; MODULATION; MOLYBDENUM COMPOUNDS; SCHOTTKY BARRIER DIODES;

ENHANCED CARRIER MOBILITY; GRAPHENE CONTACTS; GRAPHENE ELECTRODES; METAL CONTACTS; SCHOTTKY BARRIERS;

GRAPHENE TRANSISTORS;

EID: 84947240042 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c5nr06076a Document Type: Article

Times cited : (31)

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