Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Nano Letters

Volumn 11, Issue 6, 2011, Pages 2396-2399

  Mayorov, Alexander S ^a   Gorbachev, Roman V ^a   Morozov, Sergey V ^a,b   Britnell, Liam ^a   Jalil, Rashid ^a   Ponomarenko, Leonid A ^a   Blake, Peter ^a   Novoselov, Kostya S ^a   Watanabe, Kenji ^c   Taniguchi, Takashi ^c   Geim, A K ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

ballistic transport; Boron nitride; encapsulated graphene; negative bend resistance; top gate

Indexed keywords

AMBIENT ATMOSPHERE; ANOMALOUS HALL EFFECTS; BALLISTIC TRANSPORTS; BEND RESISTANCES; ENCAPSULATED GRAPHENE; MICROMETER SCALE; ROOM TEMPERATURE; TOP GATE; ULTRA-THIN;

BORON; GATE DIELECTRICS; GATES (TRANSISTOR); GRAPHENE; HALL EFFECT; MICROMETERS; NITRIDES; TRANSPORT PROPERTIES;

BALLISTICS;

BORON DERIVATIVE; ELBOR; GRAPHITE;

ARTICLE; CHEMISTRY; ELECTRONICS; SURFACE PROPERTY; TEMPERATURE;

BORON COMPOUNDS; ELECTRONICS; GRAPHITE; SURFACE PROPERTIES; TEMPERATURE;

EID: 79958830526     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200758b     Document Type: Article

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