Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Nature Nanotechnology

Volumn 9, Issue 10, 2014, Pages 808-813

  Mishchenko, A ^a   Tu, J S ^a   Cao, Y ^a   Gorbachev, R V ^a   Wallbank, J R ^b   Greenaway, M T ^c   Morozov, V E ^a   Morozov, S V ^d   Zhu, M J ^a   Wong, S L ^a   Withers, F ^a   Woods, C R ^a   Kim, Y J ^a,e   Watanabe, K ^f   Taniguchi, T ^f   Vdovin, E E ^c,d   Makarovsky, O ^c   Fromhold, T M ^c   Fal'ko, V I ^b   Geim, A K ^a   Eaves, L ^a,c   Novoselov, K S ^a   more..

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b LANCASTER UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^e Seoul National University   (South Korea)

^f NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; GRAPHENE TRANSISTORS; GRAPHITE ELECTRODES; III-V SEMICONDUCTORS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; NITRIDES; RESONANT TUNNELING; SEMICONDUCTOR INSULATOR BOUNDARIES; VAN DER WAALS FORCES;

CRYSTALLOGRAPHIC ORIENTATIONS; DEVICE CHARACTERISTICS; GRAPHENE ELECTRODES; HEXAGONAL BORON NITRIDE; NEGATIVE DIFFERENTIAL CONDUCTANCE; PHYSICAL PHENOMENA; RELATIVE ORIENTATION; SELECTION OF MATERIALS;

GRAPHENE;

BORON NITRIDE NANOTUBE; GRAPHENE;

ARTICLE; CHEMICAL ANALYSIS; CHIRALITY; CONDUCTANCE; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; ELECTRIC POTENTIAL; ELECTRODE; ELECTRON; HETEROSTRUCTURE; PHASE TRANSITION; PRIORITY JOURNAL; RADIOFREQUENCY; SEMICONDUCTOR; TWIST CONTROLLED RESONANT TUNNELLING;

EID: 84915775124     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.187     Document Type: Article

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