Computational study of metal contacts to monolayer transition-metal dichalcogenide semiconductors

Physical Review X

Volumn 4, Issue 3, 2014, Pages

  Kang, Jiahao ^a   Liu, Wei ^a   Sarkar, Deblina ^a   Jena, Debdeep ^b   Banerjee, Kaustav ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

Computational Physics; Electronics; Nanophysics

Indexed keywords

CALCULATIONS; COMPUTATION THEORY; CONTACTS (FLUID MECHANICS); DENSITY FUNCTIONAL THEORY; DISPERSIONS; ELECTRONIC EQUIPMENT; ENERGY GAP; GOLD COMPOUNDS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; PALLADIUM COMPOUNDS; SCHOTTKY BARRIER DIODES; SELENIUM COMPOUNDS; SULFUR COMPOUNDS; TRANSITION METALS; VAN DER WAALS FORCES;

AB INITIO DENSITY FUNCTIONAL THEORIES (DFT); COMPUTATIONAL PHYSICS; COMPUTATIONAL STUDIES; FERMI LEVEL PINNING; INJECTION EFFICIENCY; MULLIKEN POPULATION ANALYSIS; NANOPHYSICS; TRANSITION METAL DICHALCOGENIDES;

TUNGSTEN COMPOUNDS;

EID: 84905737252     PISSN: None     EISSN: 21603308     Source Type: Journal    
DOI: 10.1103/PhysRevX.4.031005     Document Type: Review

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