Field-effect transistors built from all two-dimensional material components

ACS Nano

Volumn 8, Issue 6, 2014, Pages 6259-6264

  Roy, Tania ^a,b,c   Tosun, Mahmut ^a,b,c   Kang, Jeong Seuk ^a,b,c   Sachid, Angada B ^a   Desai, Sujay B ^a,b,c   Hettick, Mark ^a,b,c   Hu, Chenming C ^a   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

graphene; heterolayers; hexagonal boron nitride; layered materials; transition metal dichalcogenides

Indexed keywords

FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; MATERIALS; MOLYBDENUM COMPOUNDS; SEMICONDUCTOR DIODES; SURFACE ROUGHNESS; TRANSISTORS; TWO DIMENSIONAL; VAN DER WAALS FORCES;

HETEROLAYERS; HEXAGONAL BORON NITRIDE; LAYERED MATERIAL; TRANSITION METAL DICHALCOGENIDES;

INTERFACES (MATERIALS);

EID: 84903437984     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn501723y     Document Type: Article

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