Graphene/MoS2 Hybrid technology for large-scale two-dimensional electronics

Nano Letters

Volumn 14, Issue 6, 2014, Pages 3055-3063

  Yu, Lili ^a   Lee, Yi Hsien ^b   Ling, Xi ^a   Santos, Elton J G ^c,f,g   Shin, Yong Cheol ^d   Lin, Yuxuan ^a   Dubey, Madan ^e   Kaxiras, Efthimios ^c   Kong, Jing ^a   Wang, Han ^a,h   Palacios, Tomás ^a  

^a USA   (United States)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c HARVARD UNIVERSITY   (United States)

^d Massachusetts Institute of Technology Cambridge   (United States)

^e U S ARMY RESEARCH LABORATORY   (United States)

^f Stanford University   (United States)

^g SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^h IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

field effect transistor; flexible and transparent; graphene; heterostructure; integrated circuits; Molybdenum disulfide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GRAPHENE; HETEROJUNCTIONS; INTEGRATED CIRCUITS; MOLYBDENUM COMPOUNDS; OHMIC CONTACTS; TWO DIMENSIONAL;

FLEXIBLE AND TRANSPARENT; FLEXIBLE TRANSPARENT ELECTRONICS; HETEROSTRUCTURE; HIGH PERFORMANCE DEVICES; MOLYBDENUM DISULFIDE; SCHOTTKY BARRIER HEIGHTS; SEMICONDUCTING TRANSITION; THEORETICAL INVESTIGATIONS;

FLEXIBLE ELECTRONICS;

EID: 84902277236     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl404795z     Document Type: Article

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