Vertical field effect transistor based on graphene/transition metal dichalcogenide van der Waals heterostructure

ECS Transactions

Volumn 69, Issue 5, 2015, Pages 357-363

  Moriya, R ^a   Yamaguchi, T ^a   Inoue, Y ^a   Sata, Y ^a   Morikawa, S ^a   Masubuchi, S ^a   Machida, T ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; GRAPHENE; HETEROJUNCTIONS; INTERFACE STATES; METALS; MODULATION; NANOELECTRONICS; SCHOTTKY BARRIER DIODES; VAN DER WAALS FORCES;

ELECTRIC FIELD MODULATION; ELECTRONICS APPLICATIONS; EXFOLIATED GRAPHENE; EXTERNAL ELECTRIC FIELD; OPERATION CURRENTS; SCHOTTKY BARRIER HEIGHTS; VERTICAL FIELD EFFECT TRANSISTORS; VERTICAL TRANSPORTS;

GRAPHENE TRANSISTORS;

EID: 84946077261     PISSN: 19386737     EISSN: 19385862     Source Type: Conference Proceeding    
DOI: 10.1149/06905.0357ecst     Document Type: Conference Paper

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