Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions

Nature Nanotechnology

Volumn 9, Issue 12, 2014, Pages 1024-1030

  Duan, Xidong ^a   Wang, Chen ^b   Shaw, Jonathan C ^c   Cheng, Rui ^b   Chen, Yu ^b   Li, Honglai ^a   Wu, Xueping ^a   Tang, Ying ^a   Zhang, Qinling ^a   Pan, Anlian ^a   Jiang, Jianhui ^a   Yu, Ruqing ^a   Huang, Yu ^b,c   Duan, Xiangfeng ^c  

^a HUNAN UNIVERSITY   (China)

^b University of California   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LAYERED SEMICONDUCTORS; LIGHT TRANSMISSION; MAPPING; MODULATION; MOLYBDENUM COMPOUNDS; SELENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; TUNGSTEN COMPOUNDS;

COMPLEMENTARY INVERTERS; HETEROSTRUCTURE INTERFACES; LATERAL EPITAXIAL GROWTHS; PHOTOLUMINESCENCE MAPPING; SEMICONDUCTOR HETEROJUNCTIONS; SEMICONDUCTOR HETEROSTRUCTURES; SINGLE-CRYSTALLINE STRUCTURES; TWO-DIMENSIONAL CRYSTALS;

HETEROJUNCTIONS;

GRAPHENE; METAL OXIDE; SELENIUM; SULFUR;

ARTICLE; CHEMICAL COMPOSITION; CRYSTAL STRUCTURE; ELECTRIC POTENTIAL; ELECTRON; ELECTRON DIFFRACTION; ILLUMINATION; LIGHT EMITTING DIODE; PHOTOLUMINESCENCE; PRIORITY JOURNAL; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLIZATION;

CRYSTALLIZATION; SEMICONDUCTORS;

EID: 84920986546     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.222     Document Type: Article

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