Dual-gated MoS2/WSe2van der Waals tunnel diodes and transistors

ACS Nano

Volumn 9, Issue 2, 2015, Pages 2071-2079

  Roy, Tania ^a,b,c   Tosun, Mahmut ^a,b,c   Cao, Xi ^d   Fang, Hui ^a,b,c   Lien, Der Hsien ^a,b,c,e   Zhao, Peida ^a,b,c   Chen, Yu Ze ^f   Chueh, Yu Lun ^f   Guo, Jing ^d   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d University of Florida   (United States)

^e NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^f NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

2D; electron tunneling; negative differential resistance; steep; TFET; transition metal dichalcogenide

Indexed keywords

CARRIER CONCENTRATION; DIODES; ELECTRIC POTENTIAL; HETEROJUNCTIONS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NEGATIVE RESISTANCE; TRANSISTORS; TRANSITION METALS; TUNNEL DIODES; VAN DER WAALS FORCES;

BAND TO BAND TUNNELING; ELECTROSTATIC SCREENING; INTERLAYER COUPLING; NEGATIVE DIFFERENTIAL RESISTANCES; STEEP; TFET; TRANSITION METAL DICHALCOGENIDES; TUNNEL TRANSISTORS;

ELECTRON TUNNELING;

EID: 84923519221     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn507278b     Document Type: Article

References (29)

1. Ionescu, A. M.; Riel, H. Tunnel Field-Effect Transistors as Energy-Efficient Electronic Switches Nature 2011, 479, 329-337
2. Appenzeller, J.; Lin, Y. M.; Knoch, J.; Avouris, P. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors Phys. Rev. Lett. 2004, 93, 196805
3. Choi, W. Y.; Park, B.-G.; Lee, J. D.; Liu, T.-J. K. Tunneling Field-Effect Transistors (TFETs) with Subthreshold Swing (SS) Less Than 60 mV/dec IEEE Electron Device Lett. 2007, 28, 743-745
4. Bhuwalka, K. K.; Schulze, J.; Eisele, T. Performance Enhancement of Vertical Tunnel Field-Effect Transistor with SiGe in the Delta P(+) Layer Jpn. J. Appl. Phys. 2004, 43, 4073-4078
5. Dewey, G.; Chu-Kung, B.; Boardman, J.; Fastenau, J. M.; Kavalieros, J.; Kotlyar, R.; Liu, W. K.; Lubyshev, D.; Metz, M.; Mukherjee, N. et al. Fabrication, Characterization, and Physics of III-V Heterojunction Tunneling Field Effect Transistors (H-TFET) for Steep Sub-Threshold Swing IEEE Int. Electron Devices Meet. 2011, 33, 6
6. Hao, L.; Seabaugh, A. Tunnel Field-Effect Transistors: State-of-the-Art IEEE J. Electron Devices Soc. 2014, 2, 44-49
7. Ford, A. C.; Yeung, C. W.; Chuang, S.; Kim, H. S.; Plis, E.; Krishna, S.; Hu, C.; Javey, A. Ultrathin Body InAs Tunneling Field-Effect Transistors on Si Substrates Appl. Phys. Lett. 2011, 98, 113105-7
8. Zeng, Y.; Kuo, C.-I.; Kapadia, R.; Hsu, C.-Y.; Javey, A.; Hu, C. Two-Dimensional to Three-Dimensional Tunneling in InAs/AlSb/GaSb Quantum Well Heterojunctions J. Appl. Phys. 2013, 114, 0245021-4
9. Agarwal, S.; Yablonovitch, E. Band-Edge Steepness Obtained From Esaki/Backward Diode Current-Voltage Characteristics IEEE Trans. Electron Devices 2014, 61, 1488-1493
10. 2Transistors Nat. Nanotechnol. 2011, 6, 147-150
11. 2p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
12. Geim, A. K.; Grigorieva, I. V. Van der Waals Heterostructures Nature 2013, 499, 419-425
13. Fang, H.; Battaglia, C.; Carraro, C.; Nemsak, S.; Ozdol, B.; Kang, J. S.; Bechtel, H. A.; Desai, S. B.; Kronast, F.; Unal, A. A. et al. Strong Interlayer Coupling in Van der Waals Heterostructures Built from Single-Layer Chalcogenides Proc. Natl. Acad. Sci. U.S.A. 2014, 111, 6198-6202
14. 2Membranes Nano Lett. 2011, 11, 5148-5153
15. 2ACA Nano 2014, 8, 2880-2888
16. Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V. et al. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Science 2012, 335, 947-950
17. Roy, T.; Liu, L.; de la Barrera, S.; Chakrabarti, B.; Hesabi, Z. R.; Joiner, C. A.; Feenstra, R. M.; Gu, G.; Vogel, E. M. Tunneling Characteristics in Chemical Vapor Deposited Graphene-Hexagonal Boron Nitride-Graphene Junctions Appl. Phys. Lett. 2014, 104, 1235061-4
18. 2Heterojunction p-n Diodes Nano Lett. 2014, 14, 5590-5597
19. Hsu, W.-T.; Zhao, Z.-A.; Li, L.-J.; Chen, C.-H.; Chiu, M.-H.; Chang, P.-S.; Chou, Y.-C.; Chang, W.-H. Second Harmonic Generation from Artificially Stacked Transition Metal Dichalcogenide Twisted Bilayers ACS Nano 2014, 8, 2951-2958
20. Furchi, M. M.; Pospischil, A.; Libisch, F.; Burgdorfer, J.; Mueller, T. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction Nano Lett. 2014, 14, 4785-4791
21. Lee, C.-H.; Lee, G.-H.; van der Zande, A. M.; Chen, W.; Li, Y.; Han, M.; Cui, X.; Arefe, G.; Nuckolls, C.; Heinz, T. F. et al. Atomically Thin p-n Junctions with Van der Waals Heterointerfaces Nat. Nanotechnol. 2014, 9, 676-681
22. Agarwal, S.; Teherani, J. T.; Hoyt, J. L.; Antoniadis, D. A.; Yablonovitch, E. Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor IEEE Trans. Electron Devices 2014, 61, 1599-1606
23. Roy, T.; Tosun, M.; Kang, J. S.; Sachid, A. B.; Desai, S. B.; Hettick, M.; Hu, C. C.; Javey, A. Field-Effect Transistors Built from All Two-Dimensional Material Components ACS Nano 2014, 8, 6259-6264
24. 2: Characterization and Mechanistic Investigation Nano Res. 2013, 6, 200-207
25. Fang, H.; Tosun, M.; Seol, G.; Chang, T. C.; Takei, K.; Guo, J.; Javey, A. Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium Nano Lett. 2013, 13, 1991-1995
26. 2Complementary Field-Effect Transistors ACS Nano 2014, 8, 4948-4953
27. 2by Benzyl Viologen J. Am. Chem. Soc. 2014, 136, 7853-7856
28. Kumar, S. B.; Seol, G.; Guo, J. Modeling of a Vertical Tunneling Graphene Heterojunction Field-Effect Transistor Appl. Phys. Lett. 2012, 101, 0335031-5
29. http://www.datasheetarchive.com/dl/Datasheet-024/DSA00420120.pdf.