High-κ oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors

Proceedings of the National Academy of Sciences of the United States of America

Volumn 107, Issue 15, 2010, Pages 6711-6715

  Liao, Lei ^a   Bai, Jingwei ^a   Qu, Yongquan ^a   Lin, Yung Chen ^a   Li, Yujing ^a   Huang, Yu ^a   Duana, Xiangfeng ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carrier mobility; Dielectric nanoribbon; Graphene dielectric integration; Nanoelectronics

Indexed keywords

ALUMINUM OXIDE; GRAPHENE; NANORIBBON; OXIDE;

ARTICLE; COMPARATIVE STUDY; CONDUCTANCE; DEVICE; ELECTRONICS; HIGH TEMPERATURE; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; SYNTHESIS;

ALGORITHMS; ALUMINUM OXIDE; CRYSTALLIZATION; ELECTRONICS; EQUIPMENT DESIGN; GRAPHITE; MATERIALS TESTING; MICROSCOPY, ATOMIC FORCE; MICROSCOPY, ELECTRON, TRANSMISSION; NANOSTRUCTURES; NANOTECHNOLOGY; SURFACE PROPERTIES; TRANSISTORS, ELECTRONIC;

EID: 77951044011     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.0914117107     Document Type: Article

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