SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 17, 2012, Pages 2320-2325

Synthesis of large-area MoS 2 atomic layers with chemical vapor deposition

(11) Lee, Yi Hsien a Zhang, Xin Quan c Zhang, Wenjing a Chang, Mu Tung b Lin, Cheng Te a Chang, Kai Di c Yu, Ya Chu c Wang, Jacob Tse Wei a Chang, Chia Seng b Li, Lain Jong a Lin, Tsung Wu c

a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

b INSTITUTE OF PHYSICS (Taiwan)

c TUNGHAI UNIVERSITY (Taiwan)

Author keywords

chemical vapor deposition; field effect transistors; layered materials; molybdenum disulfide

Indexed keywords

ATOMIC LAYER; ELECTRICAL MEASUREMENT; LAYERED MATERIAL; MOLYBDENUM DISULFIDE; SYNTHETIC PROCESS; TEM IMAGES;

FIELD EFFECT TRANSISTORS; MOLYBDENUM; MOLYBDENUM OXIDE; MONOLAYERS; VAPORS;

CHEMICAL VAPOR DEPOSITION;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE; MOLYBDENUM TRIOXIDE; NANOMATERIAL; OXIDE; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; GAS; ULTRASTRUCTURE;

DISULFIDES; GASES; MOLYBDENUM; NANOSTRUCTURES; OXIDES; SILICON DIOXIDE;

EID: 84860329324 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201104798 Document Type: Article

Times cited : (3180)

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