Toward barrier free contact to molybdenum disulfide using graphene electrodes

Nano Letters

Volumn 15, Issue 5, 2015, Pages 3030-3034

  Liu, Yuan ^a   Wu, Hao ^a   Cheng, Hung Chieh ^a   Yang, Sen ^a   Zhu, Enbo ^a   He, Qiyuan ^b   Ding, Mengning ^a   Li, Dehui ^b   Guo, Jian ^a   Weiss, Nathan O ^a   Huang, Yu ^a,b   Duan, Xiangfeng ^b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

barrier free; graphene contact; high mobility; layered materials; MoS2< inf>; ohmic contact

Indexed keywords

CONTACTS (FLUID MECHANICS); ELECTRIC CONTACTORS; ELECTRODES; GRAPHENE; GRAPHITE ELECTRODES; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; MOLYBDENUM; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE;

BARRIER-FREE; CRYOGENIC TEMPERATURES; ELECTRONIC MATERIALS; FIELD-EFFECT MOBILITIES; GRAPHENE CONTACTS; HIGH MOBILITY; LAYERED MATERIAL; LAYERED SEMICONDUCTORS;

MOLYBDENUM COMPOUNDS;

BORON DERIVATIVE; BORON NITRIDE; DISULFIDE; GRAPHITE; MOLYBDENUM; MOLYBDENUM DISULFIDE; NANOMATERIAL;

CHEMISTRY; ELECTRODE; NANOTECHNOLOGY; SEMICONDUCTOR;

BORON COMPOUNDS; DISULFIDES; ELECTRODES; GRAPHITE; MOLYBDENUM; NANOSTRUCTURES; NANOTECHNOLOGY; SEMICONDUCTORS;

EID: 84929173433     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl504957p     Document Type: Article

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