Spectroscopic signatures for interlayer coupling in MoS2-WSe2 van der waals stacking

ACS Nano

Volumn 8, Issue 9, 2014, Pages 9649-9656

  Chiu, Ming Hui ^a   Li, Ming Yang ^b   Zhang, Wengjing ^c,d   Hsu, Wei Ting ^e   Chang, Wen Hao ^e   Terrones, Mauricio ^f   Terrones, Humberto ^g   Li, Lain Jong ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d Shenzhen University   (China)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^f PENNSYLVANIA STATE UNIVERSITY   (United States)

^g Research Rensselaer Polytechnic Institute   (United States)

Author keywords

heterojunction; interlayer coupling; molybdenum disulfide; transition metal dichalcogenides; tungsten diselenides; van der Wall stacking

Indexed keywords

CHEMICAL VAPOR DEPOSITION; HETEROJUNCTIONS; MONOLAYERS; TRANSITION METALS; VAN DER WAALS FORCES;

DISELENIDES; INTERLAYER COUPLING; MOLYBDENUM DISULFIDE; TRANSITION METAL DICHALCOGENIDES; VAN DER WALL STACKING;

MOLYBDENUM COMPOUNDS;

EID: 84921481158     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn504229z     Document Type: Article

References (59)

1. 2 Atomic Layers with Chemical Vapor Deposition Adv. Mater. 2012, 24, 2320-2325
2. 2 Monolayers and Device Applications ACS Nano 2013, 8, 923-930
3. 3 Sulfurization Nanoscale 2012, 4, 6637-6641
4. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
5. Ramasubramaniam, A. Large Excitonic Effects in Monolayers of Molybdenum and Tungsten Dichalcogenides Phys. Rev. B 2012, 86, 115409
6. 2 ACS Nano 2010, 4, 2695-2700
7. 2 Nat. Nanotechnol. 2013, 8, 634-638
8. 2 Nano Lett. 2010, 10, 1271-1275
9. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712
10. 2 Transistors Nano Lett. 2012, 12, 4674-4680
11. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
12. 2 Appl. Phys. Lett. 2012, 101, 043103
13. 2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
14. Lee, Y.-H.; Yu, L.; Wang, H.; Fang, W.; Ling, X.; Shi, Y.; Lin, C.-T.; Huang, J.-K.; Chang, M.-T.; Chang, C.-S. et al. Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces Nano Lett. 2013, 13, 1852-1857
15. 2 Heterostructures Sci. Rep. 2014, 4, 3826
16. 2/Graphene Heterostructures ACS Nano 2013, 7, 3246-3252
17. Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V. et al. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Science 2012, 335, 947-950
18. Geim, A. K.; Grigorieva, I. V. Van der Waals Heterostructures Nature 2013, 499, 419-425
19. Sup Choi, M.; Lee, G.-H.; Yu, Y.-J.; Lee, D.-Y.; Hwan Lee, S.; Kim, P.; Hone, J.; Jong Yoo, W. Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices Nat. Commun. 2013, 4, 1624
20. 2 Heterostructures for Flexible and Transparent Electronics Nat. Nanotechnol. 2013, 8, 100-103
21. Britnell, L.; Ribeiro, R. M.; Eckmann, A.; Jalil, R.; Belle, B. D.; Mishchenko, A.; Kim, Y.-J.; Gorbachev, R. V.; Georgiou, T.; Morozov, S. V. et al. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films Science 2013, 340, 1311-1314
22. Haigh, S. J.; Gholinia, A.; Jalil, R.; Romani, S.; Britnell, L.; Elias, D. C.; Novoselov, K. S.; Ponomarenko, L. A.; Geim, A. K.; Gorbachev, R. Cross-sectional Imaging of Individual Layers and Buried Interfaces of Graphene-based Heterostructures and Superlattices Nat. Mater. 2012, 11, 764-767
23. 2 Heterostructures. 2014, ArXiv:1403.4985. arXiv.org e-Print arXiv. http://arxiv.org/abs/1403.4985.
24. 2 Heterojunction p-n Diodes. 2014, ArXiv:1403.3447. arXiv.org e-Print arXiv. http://arxiv.org/abs/1403.3447.
25. Furchi, M. M.; Pospischil, A.; Libisch, F.; Burgdorfer, J.; Mueller, T. Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction. 2014, ArXiv:1403.2652. arXiv.org e-Print arXiv. http://arxiv.org/abs/1403.2652.
26. Lee, C.-H.; Lee, G.-H.; van der Zande, A. M.; Chen, W.; Li, Y.; Han, M.; Cui, X.; Arefe, G.; Nuckolls, C.; Heinz, T. F. et al. Atomically Thin p-n Junctions with van der Waals Heterointerfaces Nat. Nanotechnol. 2014, 9, 676-681
27. Fang, H.; Battaglia, C.; Carraro, C.; Nemsak, S.; Ozdol, B.; Kang, J. S.; Bechtel, H. A.; Desai, S. B.; Kronast, F.; Unal, A. A. et al. Strong Interlayer Coupling in van der Waals Heterostructures Built from Single-Layer Chalcogenides Proc. Natl. Acad. Sci. U.S.A. 2014, 111, 6198-6202
28. 2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending Nano Lett. 2014, 14, 2443-2447
29. 2 Phys. Rev. B 2013, 88, 195313
30. 2 Opt. Express 2013, 21, 4908-4916
31. 2 Phys. Rev. B 2011, 84, 155413
32. 2 Phys. Rev. B 1971, 3, 4286-4292
33. 2 Phys. Rev. B 2013, 87, 081307
34. 2: Evolution of Raman Scattering Adv. Funct. Mater. 2012, 22, 1385-1390
35. Terrones, H.; Corro, E. D.; Feng, S.; Poumirol, J. M.; Rhodes, D.; Smirnov, D.; Pradhan, N. R.; Lin, Z.; Nguyen, M. A. T.; Elias, A. L. et al. New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides Sci. Rep. 2014, 4, 4215
36. 2 Phys. Rev. B 2013, 87, 115413
37. 2 Nanoscale 2013, 5, 9677-9683
38. Clark, S. J.; Segall, M. D.; Pickard, C. J.; Hasnip, P. J.; Probert, M. J.; Refson, K.; Payne, M. C. First Principles Methods using CASTEP Z. Kristallogr. 2005, 220, 567-570
39. Ortmann, F.; Bechstedt, F.; Schmidt, W. G. Semiempirical van der Waals Correction to the Density Functional Description of Solids and Molecular Structures Phys. Rev. B 2006, 73, 205101
40. Refson, K.; Tulip, P. R.; Clark, S. J. Variational Density-Functional Perturbation Theory for Dielectrics and Lattice Dynamics Phys. Rev. B 2006, 73, 155114
41. 2 under Uniaxial Strain Small 2013, 9, 2857-2861
42. 2 Nano Lett. 2013, 13, 5361-5366
43. 2 Phys. Rev. B 2013, 88, 121301
44. 2 Single Crystals Sci. Rep. 2013, 3, 1839
45. 2 transistor Phys. Rev. B 2012, 85, 161403
46. 2 Bilayers ArXiv 2014, 1406, 6487
47. van der Zande, A. M.; Kunstmann, J.; Chernikov, A.; Chenet, D. A.; You, Y.; Zhang, X.; Huang, P. Y.; Berkelbach, T. C.; Wang, L.; Zhang, F. et al. Tailoring the Electronic Structure in Bilayer Molybdenum Disulfide via Interlayer Twist Nano Lett. 2014, 14, 3869-3875
48. Chiu, M.-H.; Zhang, C.; Shiu, H. W.; Chuu, C.-P.; Chen, C.-H.; Chang, C.-Y. S.; Chen, C.-H.; Chou, M.-Y. et al. Determination of Band Alignment in Transition Metal Dichalcogenides Heterojunctions ArXiv 2014, 1406, 5137
49. Ramasubramaniam, A. Large Excitonic effect in Monolayer of Molybdenum and Tungsten Dichalcogenides Phys. Rev. B 2012, 86, 115409
50. Klots, A. R.; Newaz, A. K. M.; Wang, B.; Prasai, D.; Krzyzanowska, H.; Caudel, D.; Ghimire, N. J.; Yan, J.; Ivanov, B. L.; Velizhanin, K. A.; et al. Probing Excitonic States in Ultraclean Suspended Two-dimensional Semiconductors by Photocurrent Spectroscopy. 2014, ArXiv:1403.6455. arXiv.org e-Print arXiv. http://arxiv-web3.library.cornell.edu/abs/1403.6455v1.
51. 2 Phys. Rev. B 2013, 87, 155304
52. Liang, Y.; Huang, S.; Soklaski, R.; Yang, L. Quasiparticle Band-edge Energy and Band Offsets of Monolayer of Molybdenum and Tungsten Chalcogenides Appl. Phys. Lett. 2013, 103, 042106
53. Su, S.-H.; Hsu, W.-T.; Hsu, C.-L.; Chen, C.-H.; Chiu, M.-H.; Lin, Y.-C.; Chang, W.-H.; Suenaga, K.; He, J.-H.; Li, L.-J. Controllable Synthesis of Band Gap-Tunable and Monolayer Transition Metal Dichalcogenide Alloys Front. Energy Res. 2014, 2, 27
54. Ceperley, D. M.; Alder, B. J. Ground-State of The Electron-Gas by a Stochastic Method Phys. Rev. Lett. 1980, 45, 566-569
55. Perdew, J. P.; Zunger, A. Self-Interaction Correction to Density-Functional Approximations for Many-Electron Systems Phys. Rev. B 1981, 23, 5048-5079
56. 2 (M = Mo, Nb, W, Ta; X = S, Se, Te) Monolayers Physica B 2011, 406, 2254-2260
57. 2 using Angle-resolved Photoemission Spectroscopy and ab Initio Band Structure Studies J. Phys.: Condens. Matter 2012, 24, 475504
58. Perdew, J. P.; Chevary, J. A.; Vosko, S. H.; Jackson, K. A.; Pederson, M. R.; Singh, D. J.; Fiolhais, C. Atoms, Molecules, Solids, And Surfaces: Applications of the Generalized Gradient Approximation for the Exchange and Correlation Phys. Rev. B 1992, 46, 6671-6687
59. Terrones, H.; Lopez-Urias, F.; Terrones, M. Novel Hetero-Layered Materials with Tunable Direct Band Gaps by Sandwiching Different Metal Disulfides and Diselenides Sci. Rep. 2013, 3, 1549