Tunable metalinsulator transition in double-layer graphene heterostructures

Nature Physics

Volumn 7, Issue 12, 2011, Pages 958-961

  Ponomarenko, L A ^a   Geim, A K ^a   Zhukov, A A ^a   Jalil, R ^a   Morozov, S V ^a,b   Novoselov, K S ^a   Grigorieva, I V ^a   Hill, E H ^a   Cheianov, V V ^c   Fal'Ko, V I ^c   Watanabe, K ^d   Taniguchi, T ^d   Gorbachev, R V ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^c LANCASTER UNIVERSITY   (United Kingdom)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SEMICONDUCTOR INSULATOR BOUNDARIES;

ANDERSON LOCALIZATION; DISORDERED CONDUCTORS; ELECTRON-HOLE PUDDLES; EXPERIMENTAL SYSTEM; LOW TEMPERATURES; NEUTRALITY POINT; STANDARD DEVICES; STRONG LOCALIZATIONS;

GRAPHENE;

EID: 85028192987     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/NPHYS2114     Document Type: Article

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