Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors

ACS Nano

Volumn 9, Issue 4, 2015, Pages 4138-4145

  Avsar, Ahmet ^a   Vera Marun, Ivan J ^a,b   Tan, Jun You ^a   Watanabe, Kenji ^c   Taniguchi, Takashi ^c   Castro Neto, Antonio H ^a   Özyilmaz, Barbaros ^a,d  

^a National University of Singapore   (Singapore)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

black phosphorus; boron nitride encapsulation; graphene electrode; hysteresis; ohmic contact; Schottky barrier; work function

Indexed keywords

BORON NITRIDE; ELECTRODES; GRAPHENE; GRAPHITE ELECTRODES; HYSTERESIS; INERT GASES; NITRIDES; OHMIC CONTACTS; PHOSPHORUS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; TEMPERATURE DISTRIBUTION; TRANSISTORS; WORK FUNCTION;

ELECTRONIC DEVICE; ENCAPSULATION LAYER; GRAPHENE ELECTRODES; SCHOTTKY BARRIERS; SOURCE-DRAIN ELECTRODES; TEMPERATURE DEPENDENCE; TRANSPORT CHARACTERISTICS; TWO-DIMENSIONAL CRYSTALS;

FIELD EFFECT TRANSISTORS;

EID: 84929092019     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b00289     Document Type: Article

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