Electron tunneling through ultrathin boron nitride crystalline barriers

Nano Letters

Volumn 12, Issue 3, 2012, Pages 1707-1710

  Britnell, Liam ^a   Gorbachev, Roman V ^a   Jalil, Rashid ^a   Belle, Branson D ^a   Schedin, Fred ^a   Katsnelson, Mikhail I ^b   Eaves, Laurence ^c   Morozov, Sergey V ^d   Mayorov, Alexander S ^a   Peres, Nuno M R ^e,f   Castro Neto, Antonio H ^f   Leist, Jon ^g   Geim, Andre K ^a   Ponomarenko, Leonid A ^a   Novoselov, Kostya S ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^e UNIVERSITY OF MINHO   (Portugal)

^f National University of Singapore   (Singapore)

^g Momentive Performance Materials   (United States)

Author keywords

boron nitride; conductive AFM; Electron tunneling; grapheme; ultrathin

Indexed keywords

ATOMIC LAYER; BARRIER LAYERS; CONDUCTING CHANNELS; CONDUCTING MATERIALS; CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CRYSTALLINE LAYERS; DEFECT-FREE; DIFFERENT THICKNESS; GRAPHEME; HEXAGONAL BORON NITRIDE (H-BN); HIGH BREAKDOWN FIELDS; MONOLAYER THICKNESS; TUNNEL CURRENTS; ULTRA-THIN;

ATOMIC FORCE MICROSCOPY; BORON NITRIDE; CRYSTALLINE MATERIALS; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; GRAPHENE; MONOLAYERS;

ELECTRON TUNNELING;

BORON DERIVATIVE; ELBOR; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MATERIALS TESTING; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

BORON COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MATERIALS TESTING; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS;

EID: 84858164712     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl3002205     Document Type: Article

References (18)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films Science 2004, 306 (5696) 666-669
2. Geim, A. K.; Novoselov, K. S. The rise of graphene Nat. Mater. 2007, 6 (3) 183-191
3. Geim, A. K. Graphene: status and prospects Science 2009, 324 (5934) 1530-1534
4. Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.; Novoselov, K. S.; Geim, A. K. The electronic properties of graphene Rev. Mod. Phys. 2009, 81 (1) 109-162
5. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-dimensional atomic crystals Proc. Natl. Acad. Sci. U.S.A. 2005, 102 (30) 10451-10453
6. Novoselov, K. S. Nobel Lecture: Graphene: Materials in the Flatland Rev. Mod. Phys. 2011, 83 (3) 837-849
7. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; Hone, J. Boron nitride substrates for high-quality graphene electronics Nat. Nanotechnol. 2010, 7 (9) 693-696
8. Gorbachev, R. V.; Riaz, I.; Nair, R. R.; Jalil, R.; Britnell, L.; Belle, B. D.; Hill, E. W.; Novoselov, K. S.; Watanabe, K.; Taniguchi, T.; Geim, A. K.; Blake, P. Hunting for monolayer boron nitride: optical and Raman signatures Small 2011, 7 (4) 465-468
9. Ponomarenko, L. A.; Yang, R.; Mohiuddin, T. M.; Katsnelson, M. I.; Novoselov, K. S.; Morozov, S. V.; Zhukov, A. A.; Schedin, F.; Hill, E. W.; Geim, A. K. Effect of a high-κ environment on charge carrier mobility in graphene Phys. Rev. Lett. 2009, 102 (20) 206603
10. Mayorov, A. S.; Gorbachev, R. V.; Morozov, S. V.; Britnell, L.; Jalil, R.; Ponomarenko, L. A.; Blake, P.; Novoselov, K. S.; Watanabe, K.; Taniguchi, T.; Geim, A. K. Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature Nano Lett. 2011, 11 (6) 2396-2399
11. Ponomarenko, L. A.; Geim, A. K.; Zhukov, A. A.; Jalil, R.; Morozov, S. V.; Novoselov, K. S.; Grigorieva, I. V.; Hill, E. H.; Cheianov, V. V.; Fal'ko, V. I.; Watanabe, K.; Taniguchi, T.; Gorbachev, R. V. Tunable metal-insulator transition in double-layer graphene heterostructures Nat. Phys. 2011, 7 (12) 958-961
12. Amet, F.; Williams, J. R.; Garcia, A. G. F.; Yankowitz, M.; Watanabe, K.; Taniguchi, T.; Goldhaber-Gordon, D. Tunneling spectroscopy of graphene-boron nitride heterostructures Phys. Rev. B 2012, 85 (7) 073405
13. Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V.; Peres, N. M. R.; Leist, J.; Geim, A. K.; Novoselov, K. S.; Ponomaremko, L. A. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Science 2012, 335, 947-950
14. Simmons, J. G. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film J. Appl. Phys. 1963, 34 (6) 1793-1803
15. Wolf, E. L. Principles of electron tunneling spectroscopy; Oxford University Press: Oxford, U.K., 1985.
16. Kharche, N.; Nayak, S. K. Quasiparticle band gap engineering of graphene and graphone on hexagonal boron nitride substrate Nano Lett. 2011, 11 (12) 5274-5278
17. Xu, Y. N.; Ching, W. Y. Calculation of ground-state and optical properties of boron nitrides in the hexagonal, cubic, and wurtzite structures Phys. Rev. B 1991, 44 (15) 7787-7798
18. Lee, G.-H.; Yu, Y.-J.; Lee, C; Dean, C; Shepard, K. L.; Kim, P.; Hone, J. Electron tunneling through atomically flat and ultrathin hexagonal boron nitride Appl. Phys. Lett. 2011, 99, 243114