Phase-engineered low-resistance contacts for ultrathin MoS2 transistors

Nature Materials

Volumn 13, Issue 12, 2014, Pages 1128-1134

  Kappera, Rajesh ^a   Voiry, Damien ^a   Yalcin, Sibel Ebru ^b   Branch, Brittany ^b   Gupta, Gautam ^b   Mohite, Aditya D ^b   Chhowalla, Manish ^a  

^a The State University of New Jersey   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR MOBILITY; DANGLING BONDS; MOLYBDENUM COMPOUNDS; TRANSISTORS;

CURRENT SATURATION; ELECTRICAL CHARACTERISTIC; FIELD EFFECT TRANSISTOR (FETS); INTERFACE CONTROL; LAYERED SEMICONDUCTORS; LOW-RESISTANCE CONTACTS; MOLYBDENUM DISULPHIDE; SUBTHRESHOLD SWING;

FIELD EFFECT TRANSISTORS;

EID: 85027951220     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4080     Document Type: Article

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