Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides

Proceedings of the National Academy of Sciences of the United States of America

Volumn 111, Issue 17, 2014, Pages 6198-6202

  Fang, Hui ^a,b   Battaglia, Corsin ^a,b   Carraro, Carlo ^c   Nemsak, Slavomir ^b,d   Ozdol, Burak ^b,e   Kang, Jeong Seuk ^a,b   Bechtel, Hans A ^b   Desai, Sujay B ^a,b   Kronast, Florian ^f   Unal, Ahmet A ^f   Conti, Giuseppina ^b,d   Conlon, Catherine ^b,d   Palsson, Gunnar K ^b,d   Martin, Michael C ^b   Minor, Andrew M ^b,e   Fadley, Charles S ^b,d   Yablonovitch, Eli ^a,b   Maboudian, Roya ^c   Javey, Ali ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e Lawrence Berkeley National Laboratory   (United States)

^f HAHN MEITNER INSTITUT   (Germany)

Author keywords

Charge transfer; Exciton relaxation; Moir pattern; Rectifying

Indexed keywords

CHALCOGEN; CHALCOGENIDE; TRANSITION ELEMENT; UNCLASSIFIED DRUG;

ABSORPTION; ARTICLE; CHEMICAL BINDING; CHEMICAL INTERACTION; CHEMICAL STRUCTURE; DIELECTRIC CONSTANT; ELECTRON BEAM; PHOTOLUMINESCENCE; PRIORITY JOURNAL; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCE; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84899634522     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1405435111     Document Type: Article

References (34)

1. Mak KF, Lee C, Hone J, Shan J, Heinz TF (2010) Atomically thin MoS2: A new direct-gap semiconductor. Phys Rev Lett 105(13):136805.
2. Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS2 transistors. Nat Nanotechnol 6(3):147-150.
3. Fang H, et al. (2012) High-performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett 12(7):3788-3792.
4. Wang H, et al. (2012) Integrated circuits based on bilayer MoS2 transistors. Nano Lett 12(9):4674-4680.
5. Zeng H, Dai J, Yao W, Xiao D, Cui X (2012) Valley polarization in MoS2 monolayers by optical pumping. Nat Nanotechnol 7(8):490-493.
6. Jones AM, et al. (2013) Optical generation of excitonic valley coherence in monolayer WSe2. Nat Nanotechnol 8(9):634-638.
7. Geim AK, Grigorieva IV (2013) Van der Waals heterostructures. Nature 499(7459): 419-425.
8. Yu WJ, et al. (2013) Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nat Mater 12(3):246-252.
9. Georgiou T, et al. (2013) Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat Nanotechnol 8(2):100-103.
10. Yu WJ, et al. (2013) Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials. Nat Nanotechnol 8(12):952-958.
11. Britnell L, et al. (2013) Strong light-matter interactions in heterostructures of atomically thin films. Science 340(6138):1311-1314.
12. Wilson J, Yoffe A (1969) The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv Phys 18(73):193-335.
13. Terrones H, López-Urías F, Terrones M (2013) Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides. Sci Rep 3:1549.
14. Kang J, Li J, Li S-S, Xia J-B, Wang L-W (2013) Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures. Nano Lett 13(11):5485-5490.
15. Kosmider K, Fernández-Rossier J (2013) Electronic properties of the MoS2-WS2 heterojunction. Phys Rev B 87(7):075451.
16. Komsa H-P, Krasheninnikov AV (2013) Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles. Phys Rev B 88(8):085318.
17. Gong C, et al. (2013) Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors. Appl Phys Lett 103(5):053513.
18. Dean CR, et al. (2010) Boron nitride substrates for high-quality graphene electronics. Nat Nanotechnol 5(10):722-726.
19. Ponomarenko L, et al. (2011) Tunable metal-insulator transition in double-layer graphene heterostructures. Nat Phys 7(12):958-961.
20. Haigh SJ, et al. (2012) Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices. Nat Mater 11(9): 764-767.
21. Britnell L, et al. (2012) Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335(6071):947-950.
22. Gorbachev R, et al. (2012) Strong Coulomb drag and broken symmetry in double-layer graphene. Nat Phys 8:896-901.
23. Hunt B, et al. (2013) Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure. Science 340(6139):1427-1430.
24. Ponomarenko LA, et al. (2013) Cloning of Dirac fermions in graphene superlattices. Nature 497(7451):594-597.
25. Dean CR, et al. (2013) Hofstadter's butterfly and the fractal quantum Hall effect in moiré superlattices. Nature 497(7451):598-602.
26. Yankowitz M, et al. (2012) Emergence of superlattice Dirac points in graphene on hexagonal boron nitride. Nat Phys 8(5):382-386.
27. Zeng H, et al. (2013) Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides. Sci Rep 3:1608.
28. Zhao W, et al. (2013) Evolution of electronic structure in atomically thin sheets ofWS2 and WSe2. ACS Nano 7(1):791-797.
29. Van Roosbroeck W, Shockley W (1954) Photon-radiative recombination of electrons and holes in germanium. Phys Rev 94(6):1558.
30. Kost A, Lee H, Zou Y, Dapkus P, Garmire E (1989) Band-edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells. Appl Phys Lett 54(14):1356-1358.
31. Wilson BA (1988) Carrier dynamics and recombination mechanisms in staggeredalignment heterostructures. IEEE J Quantum Electron 24(8):1763-1777.
32. Li G, Zhu R, Yang Y (2012) Polymer solar cells. Nat Photonics 6(3):153-161.
33. Jariwala D, et al. (2013) Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode. Proc Natl Acad Sci USA 110(45):18076-18080.
34. Chuang S, et al. (2013) Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes. Appl Phys Lett 102(24):242101.