Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

ACS Nano

Volumn 9, Issue 7, 2015, Pages 7019-7026

  Lee, Gwan Hyoung ^a   Cui, Xu ^b   Kim, Young Duck ^b   Arefe, Ghidewon ^b   Zhang, Xian ^b   Lee, Chul Ho ^d   Ye, Fan ^c   Watanabe, Kenji ^e   Taniguchi, Takashi ^e   Kim, Philip ^f   Hone, James ^b  

^a Yonsei University   (South Korea)

^b Columbia University ^*  (United States)

^c Och Spine at New York Presbyterian Hospitals   (United States)

^d Korea University   (South Korea)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^f HARVARD UNIVERSITY   (United States)

Author keywords

contact resistance; graphene; hexagonal boron nitride; MoS2; threshold voltage; two dimensional materials; van der Waals heterostructure

Indexed keywords

BORON NITRIDE; COMPUTER CIRCUITS; CONTACT RESISTANCE; GRAPHENE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NITRIDES; THRESHOLD VOLTAGE; VAN DER WAALS FORCES;

ENVIRONMENTAL INFLUENCES; HETEROSTRUCTURE DEVICES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); HIGH PERFORMANCE DEVICES; MOS2; TWO-DIMENSIONAL MATERIALS; VAN DER WAALS;

SULFUR COMPOUNDS;

EID: 84938118601     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01341     Document Type: Article

References (47)

1. Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides Nat. Nanotechnol. 2012, 7, 699-712
2. 2 Nano Lett. 2013, 13, 1416-1421
3. Jariwala, D.; Sangwan, V. K.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides ACS Nano 2014, 8, 1102-1120
4. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
5. 2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures ACS Nano 2013, 7, 7931-7936
6. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
7. 2 ACS Nano 2010, 4, 2695-2700
8. 2 Crystals Nat. Commun. 2012, 3, 1011
9. 2 Transistors with Scandium Contacts Nano Lett. 2012, 13, 100-105
10. 2 Nat. Mater. 2013, 12, 815-820
11. 2 Nano Lett. 2013, 13, 4212-4216
12. Britnell, L.; Gorbachev, R. V.; Jalil, R.; Belle, B. D.; Schedin, F.; Mishchenko, A.; Georgiou, T.; Katsnelson, M. I.; Eaves, L.; Morozov, S. V. et al. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures Science 2012, 335, 947-950
13. Choi, M. S.; Lee, G. H.; Yu, Y. J.; Lee, D. Y.; Lee, S. H.; Kim, P.; Hone, J.; Yoo, W. J. Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices Nat. Commun. 2013, 4, 1624
14. 2 Transistors Nano Lett. 2012, 12, 4674-4680
15. Britnell, L.; Ribeiro, R. M.; Eckmann, A.; Jalil, R.; Belle, B. D.; Mishchenko, A.; Kim, Y.-J.; Gorbachev, R. V.; Georgiou, T.; Morozov, S. V. et al. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films Science 2013, 340, 1311-1314
16. 2 Transistors with Graphene Electrodes Small 2013, 9, 3295-3300
17. Tongay, S.; Zhou, J.; Ataca, C.; Liu, J.; Kang, J. S.; Matthews, T. S.; You, L.; Li, J. B.; Grossman, J. C.; Wu, J. Q. Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating Nano Lett. 2013, 13, 2831-2836
18. 2 Field-Effect Transistors and the Effect of Ambient on Their Performances Appl. Phys. Lett. 2012, 100, 123104
19. 2 from First Principles Phys. Rev. B 2012, 85, 115317
20. 2 from First Principles Phys. Rev. B 2013, 87, 115418
21. Ma, N.; Jena, D. Charge Scattering and Mobility in Atomically Thin Semiconductors Phys. Rev. X 2014, 4, 011043
22. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726
23. 2 from First Principles Phys. Rev. B 2013, 87, 235312
24. 2 Field-Effect Transistors: Substrate and Dielectric Effects Appl. Phys. Lett. 2013, 102, 042104
25. 2 Field-Effect Transistors ACS Nano 2011, 5, 7707-7712
26. 2 Using a van der Waals Heterostructure Device Platform Nat. Nanotechnol. 2015, 10, 534-540
27. 2 MOSFETs ACS Nano 2012, 6, 8563-8569
28. S Nanosheet Transistor Channel Small 2014, 10, 2356-2361
29. 2 Field Effect Transistors ACS Nano 2012, 6, 5635-5641
30. Zhou, W.; Zou, X.; Najmaei, S.; Liu, Z.; Shi, Y.; Kong, J.; Lou, J.; Ajayan, P. M.; Yakobson, B. I.; Idrobo, J. C. Intrinsic Structural Defects in Monolayer Molybdenum Disulfide Nano Lett. 2013, 13, 2615-22
31. Wang, L.; Meric, I.; Huang, P. Y.; Gao, Q.; Gao, Y.; Tran, H.; Taniguchi, T.; Watanabe, K.; Campos, L. M.; Muller, D. A. et al. One-Dimensional Electrical Contact to a Two-Dimensional Material Science 2013, 342, 614-617
32. Haigh, S. J.; Gholinia, A.; Jalil, R.; Romani, S.; Britnell, L.; Elias, D. C.; Novoselov, K. S.; Ponomarenko, L. A.; Geim, A. K.; Gorbachev, R. Cross-Sectional Imaging of Individual Layers and Buried Interfaces of Graphene-Based Heterostructures and Superlattices Nat. Mater. 2012, 11, 764-767
33. van der Zande, A. M.; Huang, P. Y.; Chenet, D. A.; Berkelbach, T. C.; You, Y. M.; Lee, G. H.; Heinz, T. F.; Reichman, D. R.; Muller, D. A.; Hone, J. C. Grains and Grain Boundaries in Highly Crystalline Monolayer Molybdenum Disulphide Nat. Mater. 2013, 12, 554-561
34. Chow, P. K.; Jacobs-Gedrim, R. B.; Gao, J.; Lu, T.-M.; Yu, B.; Terrones, H.; Koratkar, N. Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides ACS Nano 2015, 9, 1520-1527
35. 2 through Defect Engineering and Oxygen Bonding ACS Nano 2014, 8, 5738-5745
36. 2 Transistors Nat. Nanotechnol. 2013, 8, 146-147
37. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-Dimensional Atomic Crystals Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451-10453
38. Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and Electrical Characterization of Ultrathin Crystals of Layered Transition-Metal Dichalcogenides J. Appl. Phys. 2007, 101, 014507
39. 2 Transistors Nat. Mater. 2014, 13, 1128-1134
40. Kang, S. J.; Lee, G. H.; Yu, Y. J.; Zhao, Y.; Kim, B.; Watanabe, K.; Taniguchi, T.; Hone, J.; Kim, P.; Nuckolls, C. Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures Adv. Funct. Mater. 2014, 24, 5157-5163
41. 2 Field-Effect Transistors with Graphene/Metal Heterocontacts IEEE Electron Device Lett. 2014, 35, 599-601
42. 2/Graphene Heterostructures ACS Nano 2013, 7, 3246-3252
43. 2 Transistors ACS Nano 2012, 6, 10070-10075
44. Rumyantsev, S. L.; Liu, G. X.; Shur, M. S.; Balandin, A. A. Observation of the Memory Steps in Graphene at Elevated Temperatures Appl. Phys. Lett. 2011, 98, 222107
45. Kim, Y. D.; Bae, M. H.; Seo, J. T.; Kim, Y. S.; Kim, H.; Lee, J. H.; Ahn, J. R.; Lee, S. W.; Chun, S. H.; Park, Y. D. Focused-Laser-Enabled p-n Junctions in Graphene Field-Effect Transistors ACS Nano 2013, 7, 5850-5857
46. Cao, Y.; Mishchenko, A.; Yu, G. L.; Khestanova, K.; Rooney, A.; Prestat, E.; Kretinin, A. V.; Blake, P.; Shalom, M. B.; Balakrishnan, G.; et al. Quality Heterostructures from Two Dimensional Crystals Unstable in Air by Their Assembly in Inert Atmosphere. arXiv:1502.03755, 2015.
47. Gillgren, N.; Wickramaratne, D.; Shi, Y.; Espiritu, T.; Yang, J.; Hu, J.; Wei, J.; Liu, X.; Mao, Z.; Watanabe, K. Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures 2D Mater. 2015, 2, 011001