Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Applied Physics Letters

Volumn 105, Issue 8, 2014, Pages

  Moriya, Rai ^a   Yamaguchi, Takehiro ^a   Inoue, Yoshihisa ^a   Morikawa, Sei ^a   Sata, Yohta ^a   Masubuchi, Satoru ^a,b   Machida, Tomoki ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; GRAPHENE; HETEROJUNCTIONS; MODULATION; MOLYBDENUM COMPOUNDS; SCHOTTKY BARRIER DIODES; VAN DER WAALS FORCES;

CURRENT RECTIFICATIONS; DENSITY OF STATE; HIGH-SPEED SWITCHING; LARGE CURRENT DENSITY; MECHANICAL EXFOLIATION; SCHOTTKY BARRIERS; VERTICAL FIELD EFFECT TRANSISTORS; VERTICAL HETEROSTRUCTURE;

FIELD EFFECT TRANSISTORS;

EID: 84907302877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4894256     Document Type: Article

References (16)

1. A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013). 10.1038/nature12385
2. K. S. Novoselov, Rev. Mod. Phys. 83, 837 (2011). 10.1103/RevModPhys.83. 837
3. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, M. I. Katsnelson, L. Eaves, S. V. Morozov, A. S. Mayorov, N. M. R. Peres, A. H. Castro Neto, J. Leist, A. K. Geim, L. A. Ponomarenko, and K. S. Novoselov, Nano Lett. 12, 1707 (2012). 10.1021/nl3002205
4. L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M. R. Peres, J. Leist, A. K. Geim, K. S. Novoselov, and L. A. Ponomarenko, Science 335, 947 (2012). 10.1126/science.1218461
5. T. Georgiou, R. Jalil, B. D. Belle, L. Britnell, R. V. Gorbachev, S. V. Morozov, Y.-J. Kim, A. Gholinia, S. J. Haigh, O. Makarovsky, L. Eaves, L. A. Ponomarenko, A. K. Geim, K. S. Novoselov, and A. Mishchenko, Nat. Nanotechnol. 8, 100 (2013) 10.1038/nnano.2012.224.
6. W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang, and X. Duan, Nat. Mater. 12, 246 (2013). 10.1038/nmat3518
7. W. J. Yu, Y. Liu, H. Zhou, A. Yin, Z. Li, Y. Huang, and X. Duan, Nature Nanotechnol. 8, 952 (2013). 10.1038/nnano.2013.219
8. L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. C. Neto, and K. S. Novoselov, Science 340, 1311 (2013). 10.1126/science.1235547
9. H. Yang, J. Heo, S. Park, H. J. Song, D. H. Seo, K.-E. Byun, P. Kim, I. Yoo, H.-J. Chung, and K. Kim, Science 336, 1140 (2012). 10.1126/science.1220527
10. Y.-F. Lin, W. Li, S.-L. Li, Y. Xu, A. Aparecido-Ferreira, K. Komatsu, H. Sun, S. Nakaharai, and K. Tsukagoshi, Nanoscale 6, 795 (2014). 10.1039/c3nr03677d
11. P. Y. Huang, C. S. Ruiz-Vargas, A. M. van der Zande, W. S. Whitney, M. P. Levendorf, J. W. Kevek, S. Garg, J. S. Alden, C. J. Hustedt, Y. Zhu, J. Park, P. L. McEuen, and D. A. Muller, Nature 469, 389 (2011). 10.1038/nature09718
12. X. Li, Y. Zhu, W. Cai, M. Borysiak, B. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, Nano Lett. 9, 4359 (2009). 10.1021/nl902623y
13. C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Nat. Nanotechnol. 5, 722 (2010). 10.1038/nnano.2010.172
14. T. Taychatanapat, K. Watanabe, T. Taniguchi, and P. Jarillo-Herrero, Nat. Phys. 7, 621 (2011). 10.1038/nphys2008
15. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (John Wiley & Sons, New Jersey, 2007), p. 134.
16. Y.-J. Yu, Y. Zhao, S. Ryu, L. E. Brus, K. S. Kim, and P. Kim, Nano Lett. 9, 3430 (2009). 10.1021/nl901572a