메뉴 건너뛰기




Volumn 99, Issue 23, 2011, Pages

A transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRONIC TRANSPORT MEASUREMENTS; GRAPHENE DEVICES; HEXAGONAL BORON NITRIDE; HIGH MOBILITY; QUANTUM HALL; ROOM TEMPERATURE; TRANSFER TECHNIQUE;

EID: 83455172686     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665405     Document Type: Article
Times cited : (384)

References (14)
  • 2
    • 33847306075 scopus 로고    scopus 로고
    • 10.1143/JPSJ.75.074716
    • T. Ando, J. Phys. Soc. Jpn. 75, 074716 (2006). 10.1143/JPSJ.75.074716
    • (2006) J. Phys. Soc. Jpn. , vol.75 , pp. 074716
    • Ando, T.1
  • 7
    • 34247231605 scopus 로고    scopus 로고
    • Synthesis of high-purity boron nitride single crystals under high pressure by using Ba-BN solvent
    • DOI 10.1016/j.jcrysgro.2006.12.061, PII S0022024807000486
    • T. Taniguchi and K. Watanabe, J. Cryst. Growth 303, 525 (2007). 10.1016/j.jcrysgro.2006.12.061 (Pubitemid 46617564)
    • (2007) Journal of Crystal Growth , vol.303 , Issue.2 , pp. 525-529
    • Taniguchi, T.1    Watanabe, K.2
  • 14
    • 34247889934 scopus 로고    scopus 로고
    • Carrier transport in two-dimensional graphene layers
    • DOI 10.1103/PhysRevLett.98.186806
    • E. H. Hwang, S. Adam, and S. Das Sarma, Phys. Rev. Lett. 98, 186806 (2007). 10.1103/PhysRevLett.98.186806 (Pubitemid 46701738)
    • (2007) Physical Review Letters , vol.98 , Issue.18 , pp. 186806
    • Hwang, E.H.1    Adam, S.2    Sarma, S.D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.