Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics

Nature Communications

Volumn 5, Issue , 2014, Pages

  Cheng, Rui ^a   Jiang, Shan ^b   Chen, Yu ^a   Liu, Yuan ^a   Weiss, Nathan ^a   Cheng, Hung Chieh ^a   Wu, Hao ^a   Huang, Yu ^a,b   Duan, Xiangfeng ^b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISULFIDE; GRAPHENE; MOLYBDENUM; MOLYBDENUM DISULFIDE; SILICON DIOXIDE; UNCLASSIFIED DRUG; NANOMATERIAL;

ELECTRONIC EQUIPMENT; FREQUENCY ANALYSIS; GEOMETRY; MOLYBDENUM; OSCILLATION; QUARTZ; SUBSTRATE;

AMPLIFIER; ARTICLE; ATOMIC FORCE MICROSCOPY; CONDUCTANCE; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRONICS; EMBEDDING; EQUIPMENT DESIGN; FIELD EFFECT TRANSISTOR; GEOMETRY; INTEGRATED CIRCUIT; OSCILLATION; PARTICLE SIZE; POWER SUPPLY; RAMAN SPECTROMETRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; CHEMISTRY; ELECTRICAL EQUIPMENT; NANOTECHNOLOGY; PLIABILITY; TRANSISTOR;

DISULFIDES; ELECTRICAL EQUIPMENT AND SUPPLIES; ELECTRONICS; EQUIPMENT DESIGN; MOLYBDENUM; NANOSTRUCTURES; NANOTECHNOLOGY; PLIABILITY; TRANSISTORS, ELECTRONIC;

EID: 84910121533     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms6143     Document Type: Article

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