Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles

Nano Letters

Volumn 15, Issue 10, 2015, Pages 6324-6331

  Yan, Aiming ^a,b   Velasco, Jairo ^a   Kahn, Salman ^a   Watanabe, Kenji ^c   Taniguchi, Takashi ^c   Wang, Feng ^a,b   Crommie, Michael F ^a,b   Zettl, Alex ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

chemical vapor deposition; heterostructure; hexagonal boron nitride; Molybdenum disulfide; screw dislocation driven growth; transition metal dichalcogenides

Indexed keywords

BORON NITRIDE; DEPOSITION; ENERGY GAP; FLEXIBLE ELECTRONICS; HETEROJUNCTIONS; MOLYBDENUM COMPOUNDS; NITRIDES; SCREW DISLOCATIONS; SUBSTRATES; TRANSITION METALS; VAPOR DEPOSITION;

BAND-GAP SEMICONDUCTORS; CHEMICAL VAPOR DEPOSITION METHODS; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); INSULATING SUBSTRATES; MOLYBDENUM DISULFIDE; STRUCTURED SUBSTRATE; TRANSITION METAL DICHALCOGENIDES;

CHEMICAL VAPOR DEPOSITION;

EID: 84944315765     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b01311     Document Type: Article

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