Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions

Nature Nanotechnology

Volumn 9, Issue 4, 2014, Pages 268-272

  Ross, Jason S ^a   Klement, Philip ^b,c   Jones, Aaron M ^c   Ghimire, Nirmal J ^d,e   Yan, Jiaqiang ^e,f   Mandrus, D G ^d,e,f   Taniguchi, Takashi ^g   Watanabe, Kenji ^g   Kitamura, Kenji ^g   Yao, Wang ^h   Cobden, David H ^b   Xu, Xiaodong ^a,b  

^a University of Washington   (United States)

^b JUSTUS LIEBIG UNIVERSITY   (Germany)

^c UNIVERSITY OF WASHINGTON   (United States)

^d UNIVERSITY OF TENNESSEE   (United States)

^e OAK RIDGE NATIONAL LABORATORY   (United States)

^f University of Tennessee   (United States)

^g NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^h UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; EFFICIENCY; ELECTROLUMINESCENCE; III-V SEMICONDUCTORS; LAYERED SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; MODULATORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; STRUCTURE (COMPOSITION); SULFUR COMPOUNDS; TRANSITION METALS;

BORON NITRIDE SUPPORTS; ELECTRICALLY TUNABLE; ELECTRO-OPTIC MODULATORS; ELECTROLUMINESCENCE EFFICIENCIES; ELECTRONS AND HOLES; OPTICAL INTERCONNECT; OPTOELECTRONIC APPLICATIONS; TRANSITION METAL DICHALCOGENIDES;

TUNGSTEN COMPOUNDS;

METAL;

ACCELERATION; ARTICLE; DIELECTRIC CONSTANT; ELECTROCHEMISTRY; ELECTRON; FIELD EFFECT TRANSISTOR; LASER; LIGHT EMITTING DIODE; LUMINESCENCE; OPTICS; PHOTOLUMINESCENCE; PHOTON; POLARIZATION; PRIORITY JOURNAL; QUANTUM YIELD; STATIC ELECTRICITY;

LIGHTING; SEMICONDUCTORS; TUNGSTEN COMPOUNDS;

EID: 84898624412     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.26     Document Type: Article

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