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Volumn 16, Issue 1, 2016, Pages 264-269

Synthesis of WS2xSe2-2x Alloy Nanosheets with Composition-Tunable Electronic Properties

Author keywords

band gap engineering; field effect transistor; Layered materials; semiconductor alloy; threshold voltage; transition metal dichalcogenide

Indexed keywords

ALLOYING; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTRONIC PROPERTIES; ENERGY GAP; FIELD EFFECT TRANSISTORS; NANOSHEETS; OPTICAL PROPERTIES; THRESHOLD VOLTAGE; TRANSITION METALS; TUNGSTEN COMPOUNDS;

EID: 84957552843     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b03662     Document Type: Article
Times cited : (352)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.