Light-emitting diodes by band-structure engineering in van der Waals heterostructures

Nature Materials

Volumn 14, Issue 3, 2015, Pages 301-306

  Withers, F ^a   Del Pozo Zamudio, O ^b   Mishchenko, A ^a   Rooney, A P ^a   Gholinia, A ^a   Watanabe, K ^c   Taniguchi, T ^c   Haigh, S J ^a   Geim, A K ^a   Tartakovskii, A I ^b   Novoselov, K S ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; FLEXIBLE ELECTRONICS; GRAPHENE; HETEROJUNCTIONS; MONOLAYERS; SEMICONDUCTOR DIODES; TRANSITION METALS; VAN DER WAALS FORCES;

ATOMICALLY THIN CRYSTALS; BAND STRUCTURE ENGINEERING; ELECTRONIC QUALITY; HEXAGONAL BORON NITRIDE; NEGATIVE DIFFERENTIAL RESISTANCES; PHOTOVOLTAIC DEVICES; TRANSITION METAL DICHALCOGENIDES; TRANSPARENT SUBSTRATE;

LIGHT EMITTING DIODES;

EID: 84925484117     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4205     Document Type: Article

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