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Volumn 14, Issue 6, 2014, Pages 3594-3601

High mobility WSe2 p - And n - Field-effect transistors contacted by highly doped graphene for low-resistance contacts

Author keywords

field effect transistor; graphene; ionic liquid gate; Schottky barrier

Indexed keywords

FIELD EFFECT TRANSISTORS; LIQUIDS; OHMIC CONTACTS; QUANTUM CHEMISTRY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR JUNCTIONS;

EID: 84902275085     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl501275p     Document Type: Article
Times cited : (437)

References (52)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.