Atomically thin MoS2: A new direct-gap semiconductor

Physical Review Letters

Volumn 105, Issue 13, 2010, Pages

  Mak, Kin Fai ^a   Lee, Changgu ^b   Hone, James ^c   Shan, Jie ^d   Heinz, Tony F ^a  

^a Och Spine at New York Presbyterian Hospitals   (United States)

^b Sungkyunkwan University   (South Korea)

^c Case Western Reserve University ^*  (United States)

^d CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MATERIALS; DIRECT-GAP SEMICONDUCTOR; INDIRECT BAND GAP; LUMINESCENCE QUANTUM EFFICIENCY; MOLYBDENUM DISULFIDE; OPTICAL SPECTROSCOPY; ULTRA-THIN CRYSTALS;

ELECTRON ENERGY LEVELS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MATERIALS; MATERIALS HANDLING EQUIPMENT; MOLYBDENUM; MONOLAYERS;

ABSORPTION SPECTROSCOPY;

EID: 77957204738     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.105.136805     Document Type: Article

References (32)

1. P.A. Lee, Physics and Chemistry of Materials with Layered Structures: Optical and Electrical Properties (Reidel, Dordrecht, 1976).
2. R.A. Bromley, A.D. Yoffe, and R.B. Murray, J. Phys. C JPSOAW 0022-3719 5, 759 (1972). 10.1088/0022-3719/5/7/007
3. R.V. Kasowski, Phys. Rev. Lett. 30, 1175 (1973). PRLTAO 0031-9007 10.1103/PhysRevLett.30.1175
4. L.F. Mattheis, Phys. Rev. Lett. 30, 784 (1973). PRLTAO 0031-9007 10.1103/PhysRevLett.30.784
5. L.F. Mattheis, Phys. Rev. B PLRBAQ 0556-2805 8, 3719 (1973). 10.1103/PhysRevB.8.3719
6. R. Coehoorn, Phys. Rev. B PRBMDO 0163-1829 35, 6195 (1987). 10.1103/PhysRevB.35.6195
7. R. Coehoorn, C. Haas, and R.A. Degroot, Phys. Rev. B PRBMDO 0163-1829 35, 6203 (1987). 10.1103/PhysRevB.35.6203
8. T.S. Li and G.L. Galli, J. Phys. Chem. C 111, 16192 (2007). 1932-7447 10.1021/jp075424v
9. S. Lebegue and O. Eriksson, Phys. Rev. B PRBMDO 1098-0121 79, 115409 (2009). 10.1103/PhysRevB.79.115409
10. J.C. McMenamin and W.E. Spicer, Phys. Rev. B PLRBAQ 0556-2805 16, 5474 (1977). 10.1103/PhysRevB.16.5474
11. T. Boker, Phys. Rev. B PRBMDO 0163-1829 64, 235305 (2001). 10.1103/PhysRevB.64.235305
12. K.K. Kam and B.A. Parkinson, J. Phys. Chem. 86, 463 (1982). JPCHAX 0022-3654 10.1021/j100393a010
13. B.L. Evans and P.A. Young, Proc. R. Soc. A PRLAAZ 0080-4630 284, 402 (1965). 10.1098/rspa.1965.0071
14. B.L. Evans and P.A. Young, Proc. Phys. Soc. London 91, 475 (1967). PPSOAU 0370-1328 10.1088/0370-1328/91/2/327
15. J.A. Wilson and A.D. Yoffe, Adv. Phys. 18, 193 (1969). ADPHAH 0001-8732 10.1080/00018736900101307
16. A.R. Beal, W.Y. Liang, and J.C. Knights, J. Phys. C JPSOAW 0022-3719 5, 3540 (1972). 10.1088/0022-3719/5/24/016
17. W.Y. Liang, J. Phys. C JPSOAW 0022-3719 6, 551 (1973). 10.1088/0022-3719/6/3/018
18. A.R. Beal and H.P. Hughes, J. Phys. C JPSOAW 0022-3719 12, 881 (1979). 10.1088/0022-3719/12/5/017
19. X. Zong, J. Am. Chem. Soc. 130, 7176 (2008). JACSAT 0002-7863 10.1021/ja8007825
20. Gmelin Handbook of Inorganic and Organometallic Chemistry (Springer-Verlag, Berlin, 1995), 8th ed., Vol. B7.
21. K.S. Novoselov, Proc. Natl. Acad. Sci. U.S.A. 102, 10451 (2005). PNASA6 0027-8424 10.1073/pnas.0502848102
22. Changes in the phonon spectra as a function of the layer thickness of MoS 2 have also been observed by using Raman spectroscopy: C. Lee, ACS Nano 4, 2695 (2010). 1936-0851 10.1021/nn1003937
23. A. Splendiani, Nano Lett. 10, 1271 (2010). NALEFD 1530-6984 10.1021/nl903868w
24. C. Lee, X.D. Wei, J.W. Kysar, and J. Hone, Science 321, 385 (2008); SCIEAS 0036-8075 10.1126/science.1157996
25. S.P. Berciaud, S. Ryu, L.E. Brus, and T.F. Heinz, Nano Lett. 9, 346 (2009). NALEFD 1530-6984 10.1021/nl8031444
26. K.F. Mak, Phys. Rev. Lett. 101, 196405 (2008). PRLTAO 0031-9007 10.1103/PhysRevLett.101.196405
27. M. Virsek, M. Krause, A. Kolitsch, and M. Remskar, Phys. Status Solidi B 246, 2782 (2009). PSSBBD 0370-1972 10.1002/pssb.200982281
28. See supplementary material at http://link.aps.org/supplemental/10.1103/ PhysRevLett.105.136805 for details about the sample preparation, characterization, and optical measurement techniques, as well as assignment of the PL features.
29. C. Hamaguchi, Basic Semiconductor Physics (Springer-Verlag, Berlin, 2001).
30. M. Koshino and T. Ando, Phys. Rev. B PRBMDO 1098-0121 76, 085425 (2007). 10.1103/PhysRevB.76.085425
31. K.F. Mak, M.Y. Sfeir, J.A. Misewich, and T.F. Heinz, Proc. Natl. Acad. Sci. U.S.A. 107, 14999 (2010). PNASA6 0027-8424 10.1073/pnas.1004595107
32. H. Presting, Semicond. Sci. Technol. 7, 1127 (1992). SSTEET 0268-1242 10.1088/0268-1242/7/9/001