Growth of MoS2(1- x)Se2 x (x = 0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition

ACS Nano

Volumn 9, Issue 7, 2015, Pages 7450-7455

  Feng, Qingliang ^a,b,c   Mao, Nannan ^a   Wu, Juanxia ^a   Xu, Hua ^d   Wang, Chunming ^c   Zhang, Jin ^a   Xie, Liming ^b  

^a PEKING UNIVERSITY   (China)

^b NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^c LANZHOU UNIVERSITY   (China)

^d SHAANXI NORMAL UNIVERSITY   (China)

Author keywords

alloy; morphology; MoS2(1 x)Se2 x; physical vapor deposition; Raman spectrum; tunable band gap

Indexed keywords

ALLOYING; ENERGY GAP; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MORPHOLOGY; PHYSICAL VAPOR DEPOSITION; RAMAN SCATTERING; TRANSITION METAL ALLOYS; TRANSITION METALS;

COMPOSITION CHANGES; CONTROLLED MORPHOLOGY; DEPOSITION TEMPERATURES; EDGE ORIENTATIONS; MOS2(1-X)SE2 X; TRANSITION METAL DICHALCOGENIDES; TUNABLE BAND-GAP; TWO DIMENSIONAL (2 D);

MONOLAYERS;

EID: 84938153119     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b02506     Document Type: Article

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