A subthermionic tunnel field-effect transistor with an atomically thin channel

Nature

Volumn 526, Issue 7571, 2015, Pages 91-95

  Sarkar, Deblina ^a   Xie, Xuejun ^a   Liu, Wei ^a   Cao, Wei ^a   Kang, Jiahao ^a   Gong, Yongji ^b   Kraemer, Stephan ^a   Ajayan, Pulickel M ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b Rice University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM DERIVATIVE; MOLYBDENUM;

ELECTRODE; INFORMATION TECHNOLOGY; SEMICONDUCTOR INDUSTRY; SENSOR; SILICON; TUNNEL; TUNNELING;

ARTICLE; BIOSENSOR; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTOR; INTEGRATED CIRCUIT; POWER SUPPLY; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; STATIC ELECTRICITY;

EID: 84943167066     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature15387     Document Type: Article

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