Commensurate-incommensurate transition in graphene on hexagonal boron nitride

Nature Physics

Volumn 10, Issue 6, 2014, Pages 451-456

  Woods, C R ^a   Britnell, L ^a   Eckmann, A ^a   Ma, R S ^b   Lu, J C ^b   Guo, H M ^b   Lin, X ^b   Yu, G L ^a   Cao, Y ^a   Gorbachev, R V ^a   Kretinin, A V ^a   Park, J ^a,c   Ponomarenko, L A ^a   Katsnelson, M I ^d   Gornostyrev, Yu N ^e   Watanabe, K ^f   Taniguchi, T ^f   Casiraghi, C ^a   Gao, H J ^b   Geim, A K ^a   Novoselov, K S ^a   more..

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b INSTITUTE OF PHYSICS   (China)

^c Korea Research Institute of Standards and Science   (South Korea)

^d RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^e Institute of Quantum Materials Science   (Russian Federation)

^f NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; DOMAIN WALLS; III-V SEMICONDUCTORS; LATTICE CONSTANTS; NITRIDES; OPTICAL PROPERTIES; SOLITONS;

COMMENSURATE-INCOMMENSURATE TRANSITION; ELECTRONIC AND OPTICAL PROPERTIES; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); PERIODIC POTENTIALS; ROTATION ANGLES; SOLITON-LIKE; TOPOLOGICAL DEFECT;

GRAPHENE;

EID: 84901986223     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys2954     Document Type: Article

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