Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Proceedings of the National Academy of Sciences of the United States of America

Volumn 110, Issue 45, 2013, Pages 18076-18080

  Jariwala, Deep ^a   Sangwan, Vinod K ^a   Wu, Chung Chiang ^a   Prabhumirashi, Pradyumna L ^a   Geier, Michael L ^a   Marks, Tobin J ^a   Lauhon, Lincoln J ^a   Hersam, Mark C ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

2D transition metal dichalcogenide; Photodetector; Rectifier; Single layer MoS2; Van der Waals heterostructure

Indexed keywords

GRAPHENE; MOLYBDENUM; QUANTUM DOT; SINGLE WALLED NANOTUBE;

ARTICLE; DIODE; ELECTRODE; ELECTRONICS; FIELD EFFECT TRANSISTOR; INTEGRATED CIRCUIT; IRRADIATION; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR;

2D TRANSITION METAL DICHALCOGENIDE; PHOTODETECTOR; RECTIFIER; SINGLE LAYER MOS2; VAN DER WAALS HETEROSTRUCTURE;

DISULFIDES; ELECTRONICS; MOLYBDENUM; NANOTUBES, CARBON; SEMICONDUCTORS;

EID: 84887279609     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1317226110     Document Type: Article

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