Chloride molecular doping technique on 2D materials: WS2 and MoS2

Nano Letters

Volumn 14, Issue 11, 2014, Pages 6275-6280

  Yang, Lingming ^a   Majumdar, Kausik ^b   Liu, Han ^a   Du, Yuchen ^a   Wu, Heng ^a   Hatzistergos, Michael ^c   Hung, P Y ^b   Tieckelmann, Robert ^b   Tsai, Wilman ^d   Hobbs, Chris ^b   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

^b SEMATECH   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

contact resistance; molecular doping; MoS2; Schottky barrier; TMDs; WS2

Indexed keywords

CHLORINE COMPOUNDS; CONTACT RESISTANCE; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; MOLYBDENUM COMPOUNDS; NANOELECTRONICS; SCHOTTKY BARRIER DIODES;

MOLECULAR DOPING; MOS2; SCHOTTKY BARRIERS; TMDS; WS2;

SEMICONDUCTOR DOPING;

EID: 84910125463     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl502603d     Document Type: Article

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