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Advanced Materials

Volumn 27, Issue 9, 2015, Pages 1547-1552

Performance potential and limit of MoS2 transistors

(7) Li, Xuefei a Yang, Lingming b Si, Mengwei b Li, Sichao a Huang, Mingqiang a Ye, Peide b Wu, Yanqing a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b PURDUE UNIVERSITY (United States)

Author keywords

Low frequency noise; MoS2; Negative differential resistance; Pulsed IV; Transistor

Indexed keywords

NEGATIVE RESISTANCE; TRANSISTORS;

ELECTRICAL NOISE; LOW-FREQUENCY NOISE; MOS2; NEGATIVE DIFFERENTIAL RESISTANCES; PERFORMANCE POTENTIALS; PULSED CURRENT-VOLTAGE MEASUREMENT; PULSED IV; ROOM TEMPERATURE;

MOLYBDENUM COMPOUNDS;

EID: 85027937411 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201405068 Document Type: Article

Times cited : (104)

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